Stadium Staircase Structure With Photoresist Against Micro-Trenching

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing technologies fail to effectively address the challenge of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching within the context of micro-trenching.

Innovation Solution

The utilization of photoresist material to finalize the vertical position of a stadium within a stack structure to absorb and prevent unintentional micro-trenching within the context of micro-trenching.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If additional tiers of conductive structures are formed to increase memory density, then memory capacity increases, but micro-trenching within the staircase structures occurs leading to failure

Engineering Contradiction:

Improvememory densityVSAvoidstaircase structure integrity

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

A sacrificial material is introduced as an intermediary substance between the etching process and the staircase structure. This sacrificial material absorbs the harmful ions that would otherwise cause micro-trenching, protecting the conductive structures while allowing the etching process to proceed. The sacrificial material is temporarily present during fabrication and is later removed, having served its protective function.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The etching ions that would normally cause harmful micro-trenching are redirected to attack a sacrificial material instead. The harmful etching action is converted into a beneficial process by having the ions remove the sacrificial material rather than damaging the conductive structures. This transforms the harmful etching effect into a useful tool for pattern formation without damage.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

2Quantity of substance

If the quantity of staircase structures and steps is increased to provide additional memory density, then storage capacity increases, but the overall width of the stack structure undesirably increases

Engineering Contradiction:

Improvememory densityVSAvoidstack structure width

Core Design Contradiction:

Quantity of substanceVSLength of stationary object

Solution Approach 1:

The memory structure transitions from a two-dimensional planar arrangement to a three-dimensional vertical stack. By stacking conductive structures and dielectric layers vertically, the memory density increases without proportionally increasing the lateral footprint. Multiple tiers are arranged in the vertical dimension, allowing high density while maintaining a compact width suitable for integration.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Reliability

If photoresist material is applied to absorb deflected ions, then micro-trenching is prevented, but additional manufacturing steps are required

Engineering Contradiction:

Improvestaircase structure integrityVSAvoidfabrication process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The sacrificial material is deposited onto the staircase structure before the etching process begins. This preliminary action prepares the structure for protection by having the sacrificial material in place to absorb incoming ions during the subsequent etching step. The protective layer is applied in advance, ensuring that when the etching ions arrive, the conductive structures are already shielded.

Inventive Principle:

Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The implementation of photoresist material coatings may reduce and/or prevent unintentional micro-trenching in the stadium structure by absorbing the ions deflected off of the sidewalls.

Implementation Method 1

The implementation of photoresist material coatings may reduce and/or prevent unintentional micro-trenching in the stadium structure by absorbing the ions deflected off of the sidewalls

Methodology Applied

Scientific EffectIon absorption: Absorption (physical)

Data Source

PatentUS20250391769A1Microelectronic devices including stadium structures, and related methods and electronic systems

Publication Date: 2025.12.25 MICRON TECHNOLOGY INC

AI summary

A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.