Stage Groove for Edge Ring Arcing Prevention
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Solution Overview
Problem
In semiconductor manufacturing, arcing occurs due to potential differences between films formed on the semiconductor substrate and the edge ring, leading to interrupted batch film deposition and potential component damage.
Innovation Solution
A semiconductor manufacturing apparatus with a stage featuring a conductive annular edge ring and a groove below its inner circumferential end, which separates the film formed on the stage from the film formed on the edge ring, reducing potential differences and preventing arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If films are formed on both the semiconductor substrate and the edge ring during plasma generation, then film deposition is achieved, but potential differences between these films cause arcing that interrupts batch film deposition and may damage components
Solution Approach 1:
The stage is divided into functionally distinct regions: a first region that contacts the semiconductor substrate and a second region that contacts the edge ring. These regions are electrically isolated from each other, allowing independent potential control. This segmentation prevents potential difference between substrate-contacting and edge ring-contacting surfaces, eliminating the arcing problem while maintaining continuous batch film deposition capability.
2Stability of the object's composition
If the stage contacts both the semiconductor substrate and the edge ring, then uniform plasma generation is enabled, but potential differences arise between films formed on different contacted surfaces
Solution Approach 1:
The stage is segmented into electrically isolated first and second regions. The first region contacts the semiconductor substrate while the second region contacts the edge ring. This segmentation allows each region to be at a different electrical potential, enabling uniform plasma generation across the entire chamber while preventing potential difference-induced arcing between the substrate and edge ring films.
Solution Approach 2:
The edge ring serves as an intermediary component between the stage and the plasma environment. By making the edge ring electrically isolated from the stage through the use of electrically insulating supports, the system mediates the plasma generation process while preventing direct electrical contact that would cause potential differences and arcing between films on the substrate and edge ring.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design allows for uniform plasma generation and prevents arcing, enabling continuous batch film deposition without damaging components.
Implementation Method 1
a film deposition apparatus that forms a conductive film on a semiconductor substrate while generating plasma
Data Source
AI summary
A semiconductor manufacturing apparatus includes: a stage configured to support a semiconductor substrate; and a conductive annular member provided at an outer circumferential portion of the stage and configured to enclose the semiconductor substrate when supported on the stage. The stage has a groove that is provided below a lower portion of an inner circumferential end of the annular member.