Substrate Processing Stage Pin Passage Gas Flow Control
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Solution Overview
Problem
Conventional substrate processing stages face challenges in maintaining the integrity of the bonding layer during plasma processing, as radicals from the plasma can damage the bonding layer between the electrostatic chuck and the substrate, leading to reduced heat conduction and inaccurate processing.
Innovation Solution
The stage incorporates a pin insertion passage and a heat transfer gas passage with a common gas passage, where a first member adjusts the flow rate of the heat transfer gas, ensuring it is introduced into both passages simultaneously, preventing plasma radicals from entering and damaging the bonding layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional stage structure with bonding layer is used, then the stage can be manufactured with standard processes, but the bonding layer deteriorates due to plasma radicals during processing
Solution Approach 1:
A protective film is formed on the bonding layer to act as an intermediary barrier between the bonding layer and plasma radicals. The protective film has higher resistance to plasma radicals compared to the bonding layer, preventing direct contact and damage. This mediator approach allows the bonding layer to maintain its integrity while still enabling heat conduction functionality.
Solution Approach 2:
The patent creates a protective environment for the bonding layer by forming a protective film that resists plasma radicals. This effectively creates an inert barrier that prevents harmful plasma species from reaching the bonding layer, similar to how inert atmospheres protect materials from chemical reactions.
2Manufacturing precision
If the bonding layer is exposed to plasma radicals, then the processing can proceed, but heat conduction deteriorates leading to inaccurate processing
Solution Approach 1:
The protective film serves as a mediator that preserves the bonding layer's heat conduction properties by preventing plasma radical damage. This ensures that thermal energy can be effectively transmitted through the bonding layer to the electrostatic chuck, maintaining temperature control and processing accuracy.
Solution Approach 2:
The protective film is formed in advance before plasma processing begins, providing pre-cushioning protection to the bonding layer. This preliminary protective measure ensures that the bonding layer is already shielded when plasma radicals are introduced, preventing degradation of heat conduction properties before they can occur.
3Ease of manufacture
If no protective measure is taken, then the stage structure remains simple, but the bonding layer is damaged during wafer-less dry cleaning
Solution Approach 1:
A protective film is formed on the bonding layer to act as an intermediary barrier between the bonding layer and plasma radicals. The protective film has higher resistance to plasma radicals compared to the bonding layer, preventing direct contact and damage. This mediator approach allows the bonding layer to maintain its integrity while still enabling heat conduction functionality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents the deterioration of the bonding layer, ensuring consistent heat conduction and accurate processing by isolating the bonding layer from plasma radicals, particularly during wafer-less dry cleaning processes.
Implementation Method 1
a heat transfer gas passage penetrating the stage, and configured to introduce a heat transfer gas onto a mounting surface of the stage
Implementation Method 2
a common gas passage in communication with the pin insertion passage and the heat transfer gas passage, and configured to allow the heat transfer gas to flow through the common gas passage
Data Source
AI summary
A stage includes: a pin insertion passage penetrating the stage on which a substrate is mounted, and configured to allow a lifter pin to be inserted into and penetrate the pin insertion passage, a heat transfer gas passage penetrating the stage, and configured to introduce a heat transfer gas onto a mounting surface of the stage; a common gas passage in communication with the pin insertion passage and the heat transfer gas passage, and configured to allow the heat transfer gas to flow through the common gas passage; and a first member disposed to face the common gas passage at a location at which the pin insertion passage and the common gas passage intersect each other, and configured to adjust a flow rate of the heat transfer gas introduced onto the mounting surface of the stage from the pin insertion passage.


