Substrate Processing Stage Pin Passage Gas Flow Control

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Solution Overview

Problem

Conventional substrate processing stages face challenges in maintaining the integrity of the bonding layer during plasma processing, as radicals from the plasma can damage the bonding layer between the electrostatic chuck and the substrate, leading to reduced heat conduction and inaccurate processing.

Innovation Solution

The stage incorporates a pin insertion passage and a heat transfer gas passage with a common gas passage, where a first member adjusts the flow rate of the heat transfer gas, ensuring it is introduced into both passages simultaneously, preventing plasma radicals from entering and damaging the bonding layer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional stage structure with bonding layer is used, then the stage can be manufactured with standard processes, but the bonding layer deteriorates due to plasma radicals during processing

Engineering Contradiction:
Improvebonding layer integrityVSAvoidplasma radical damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A protective film is formed on the bonding layer to act as an intermediary barrier between the bonding layer and plasma radicals. The protective film has higher resistance to plasma radicals compared to the bonding layer, preventing direct contact and damage. This mediator approach allows the bonding layer to maintain its integrity while still enabling heat conduction functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent creates a protective environment for the bonding layer by forming a protective film that resists plasma radicals. This effectively creates an inert barrier that prevents harmful plasma species from reaching the bonding layer, similar to how inert atmospheres protect materials from chemical reactions.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Manufacturing precision

If the bonding layer is exposed to plasma radicals, then the processing can proceed, but heat conduction deteriorates leading to inaccurate processing

Engineering Contradiction:
Improveprocessing accuracyVSAvoidheat conduction
Core Design Contradiction:
Manufacturing precisionVSTemperature

Solution Approach 1:

The protective film serves as a mediator that preserves the bonding layer's heat conduction properties by preventing plasma radical damage. This ensures that thermal energy can be effectively transmitted through the bonding layer to the electrostatic chuck, maintaining temperature control and processing accuracy.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protective film is formed in advance before plasma processing begins, providing pre-cushioning protection to the bonding layer. This preliminary protective measure ensures that the bonding layer is already shielded when plasma radicals are introduced, preventing degradation of heat conduction properties before they can occur.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Ease of manufacture

If no protective measure is taken, then the stage structure remains simple, but the bonding layer is damaged during wafer-less dry cleaning

Engineering Contradiction:
Improvestage structure simplicityVSAvoidbonding layer durability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

A protective film is formed on the bonding layer to act as an intermediary barrier between the bonding layer and plasma radicals. The protective film has higher resistance to plasma radicals compared to the bonding layer, preventing direct contact and damage. This mediator approach allows the bonding layer to maintain its integrity while still enabling heat conduction functionality.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively prevents the deterioration of the bonding layer, ensuring consistent heat conduction and accurate processing by isolating the bonding layer from plasma radicals, particularly during wafer-less dry cleaning processes.

Implementation Method 1

a heat transfer gas passage penetrating the stage, and configured to introduce a heat transfer gas onto a mounting surface of the stage

Methodology Applied
Scientific EffectHeat transfer: Conduction (thermal)

Implementation Method 2

a common gas passage in communication with the pin insertion passage and the heat transfer gas passage, and configured to allow the heat transfer gas to flow through the common gas passage

Methodology Applied
Scientific EffectGas flow: Convection

Data Source

PatentUS11728145B2Stage and substrate processing apparatus
Publication Date: 2023.08.15 TOKYO ELECTRON LTD
  • US11728145B2 patent drawing
  • US11728145B2 patent drawing
  • US11728145B2 patent drawing

AI summary

A stage includes: a pin insertion passage penetrating the stage on which a substrate is mounted, and configured to allow a lifter pin to be inserted into and penetrate the pin insertion passage, a heat transfer gas passage penetrating the stage, and configured to introduce a heat transfer gas onto a mounting surface of the stage; a common gas passage in communication with the pin insertion passage and the heat transfer gas passage, and configured to allow the heat transfer gas to flow through the common gas passage; and a first member disposed to face the common gas passage at a location at which the pin insertion passage and the common gas passage intersect each other, and configured to adjust a flow rate of the heat transfer gas introduced onto the mounting surface of the stage from the pin insertion passage.