Staggered Bit Line Semiconductor Memory Device
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional non-volatile memory devices face limitations in reducing the width of active areas and bit lines, which affects the integrity and performance of memory devices due to the gap-fill process limitations.
Innovation Solution
The semiconductor device design includes staggered active areas and bit lines in adjacent memory blocks, allowing for reduced bit line pitch and word line length, thereby decreasing resistance and capacitance between bit lines, and enabling the same or independent driving of neighboring memory blocks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the width of active area and bit line is reduced to enhance memory device integrity, then device density and performance are improved, but the gap-fill process has limitations that prevent further reduction
Solution Approach 1:
The patent introduces a third dimension by forming bit lines at different heights (first bit lines and second bit lines at different vertical positions) to serve different memory blocks. This vertical stacking approach allows bit lines to be positioned staggeredly, effectively reducing the planar pitch between bit lines without being constrained by the gap-fill process limitations in the horizontal dimension.
Solution Approach 2:
The patent divides the bit line structure into multiple segments: first bit lines for first memory blocks and second bit lines for second memory blocks. These segmented bit lines are positioned at different heights and can be independently formed and controlled, allowing each segment to be optimized separately and reducing the overall pitch requirements.
2Area of moving object
If bit line pitch is reduced, then area is reduced, but resistance and capacitance between bit lines increase
Solution Approach 1:
By positioning bit lines at different vertical heights, the patent increases the spatial separation between adjacent bit lines from one dimension (horizontal) to two dimensions (horizontal and vertical). This staggered three-dimensional arrangement reduces both the resistance and capacitance between bit lines while maintaining a compact planar footprint.
3Length of stationary object
If word line length is reduced, then capacitance and resistance are reduced, but memory block layout becomes more complex
Solution Approach 1:
The patent divides the memory device into multiple memory blocks (first memory blocks and second memory blocks) with staggered active areas. This segmentation allows word lines to be shorter within each block while the overall memory capacity is maintained through the combined structure of multiple blocks.
Data Source
AI summary
A semiconductor device includes a first memory block configured to include first active areas extended parallel in a first direction, a second memory block adjacent to the first memory block and configured to include second active areas extended parallel in the first direction, the second active areas being staggered from the first active areas, first bit lines disposed on the first active areas, and second bit lines disposed on the second active areas.