3D Staggered Capacitor Structure for Power Supply Noise Reduction
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Solution Overview
Problem
The scaling-down of semiconductor devices is hindered by power supply noise, which existing decoupling capacitors inadequately address, especially in high-performance devices requiring larger currents at higher frequencies with lower power supply.
Innovation Solution
A semiconductor device with a high-density capacitor element design featuring staggered first and second electrodes separated by an interlayer dielectric, forming a comb-shaped structure to provide higher capacitance and compactness, thereby acting as an effective decoupling capacitor to mitigate power supply noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional decoupling capacitors are used, then power supply noise can be reduced, but the capacitance per area is insufficient and parasitic inductance remains high
Solution Approach 1:
The patent transitions from planar capacitor electrodes to vertically stacked three-dimensional electrodes, utilizing the vertical dimension to increase capacitance density. Multiple capacitor elements are stacked in the vertical direction above the substrate, transforming a two-dimensional layout into a three-dimensional structure that achieves higher capacitance per area without increasing the lateral footprint.
Solution Approach 2:
The patent implements nested capacitor structures where smaller capacitor elements are positioned within or between larger electrode structures. The staggered arrangement allows inner electrodes to be nested between outer electrodes, maximizing the use of available space and achieving high capacitance density through hierarchical nesting of capacitor elements.
2Reliability
If capacitor size is increased to reduce power supply noise, then capacitance improves, but device area increases and scaling is hindered
Solution Approach 1:
The invention resolves the area-capacitance tradeoff by moving capacitor expansion from the lateral plane to the vertical dimension. Multiple capacitor elements are stacked vertically with staggered electrodes, allowing high total capacitance to be achieved within a compact lateral footprint, thus enabling continued device scaling while maintaining adequate decoupling capability.
Solution Approach 2:
The patent combines multiple capacitor elements into a single integrated vertical stack, merging their capacitance contributions to achieve the required total capacitance in a compact form factor. The staggered electrode configuration allows adjacent capacitors to share common electrodes, further reducing the overall area requirement.
3Ease of manufacture
If traditional capacitor electrode arrangement is used, then manufacturing is simple, but parasitic inductance and resistance are high
Solution Approach 1:
The patent reduces parasitic inductance by transitioning from lateral electrode connections to vertical stacking with staggered terminals. The vertical arrangement shortens current paths and reduces loop areas, thereby minimizing parasitic inductance while maintaining manufacturability through standard semiconductor fabrication processes.
Solution Approach 2:
The staggered electrode configuration creates an asymmetric arrangement where first and second electrodes are offset relative to each other. This asymmetry optimizes the current distribution and electrical field patterns, reducing parasitic effects while maintaining ease of manufacture through conventional lithography and etching techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves higher capacitance per area than conventional decoupling capacitors, reducing parasitic inductance and resistance, and enables better heat dissipation, leading to a more stable power supply and improved performance in semiconductor devices.
Implementation Method 1
separated by an interlayer dielectric layer
Implementation Method 2
capacitor element includes a first electrode with a first pad and first terminals connected to the first pad... and a second electrode with a second pad and second terminals connected to the second pad
Data Source
AI summary
A semiconductor device includes a substrate and at least one capacitor element on each of opposite surfaces of the substrate. The at least one capacitor element includes a first electrode with a first pad and first terminals connected to the first pad, wherein the first terminals extend away from the substrate, and a second electrode with a second pad and second terminals connected to the second pad, wherein the second terminals extend toward the substrate, wherein the first terminals and the second terminals are staggered and separated by an interlayer dielectric layer.