Staggered Electronic Interconnect Layout for Higher I/O Density
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Solution Overview
Problem
Conventional electronic package designs face challenges in input/output (I/O) interconnect density scaling, leading to increased package and PCB footprint, which inhibits device miniaturization and affects reliability and manufacturability.
Innovation Solution
A staggered liquid metal interconnect structure with a dielectric layer, featuring first and second conductive segments spaced apart by different spacings, allowing for increased I/O density without enlarging the package and PCB form-factor, and providing enhanced electrical performance through additional ground shielding and improved power integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If liquid metal interconnect pitch geometry is down-scaled to increase I/O density, then I/O interconnect density is improved, but device reliability and manufacturability deteriorate
Solution Approach 1:
The patent transitions from a two-dimensional planar interconnect layout to a three-dimensional stacked configuration. Multiple layers of conductive segments are vertically arranged with staggered positioning, allowing I/O interconnects to extend through the vertical dimension. This enables increased I/O density without reducing the pitch geometry of individual interconnects, thereby maintaining solder joint reliability and manufacturability while achieving higher overall interconnect density.
Solution Approach 2:
The patent implements a nested structure where multiple conductive segments are arranged in stacked layers within a compact vertical space. Each layer contains conductive segments that are staggered relative to adjacent layers, creating a nested configuration that maximizes space utilization. This nested arrangement allows multiple I/O interconnects to be packed into a smaller footprint without requiring aggressive pitch down-scaling.
2Quantity of substance
If package and PCB footprint is increased to accommodate higher I/O count, then I/O density is improved, but device form-factor miniaturization is inhibited
Solution Approach 1:
The patent utilizes the vertical dimension by implementing multiple stacked layers of conductive segments. This three-dimensional arrangement allows a high number of I/O interconnects to be accommodated within a compact horizontal footprint. The staggered configuration across layers enables efficient space utilization, achieving high I/O count without proportionally increasing the package and PCB area.
Solution Approach 2:
The patent divides the interconnect structure into multiple discrete layers of conductive segments. Each layer contains a subset of the total I/O interconnects, and the layers are stacked vertically with staggered arrangements. This segmentation allows the total I/O count to be distributed across multiple levels, enabling high I/O density within a reduced horizontal footprint compared to a single-layer configuration.
3Ease of manufacture
If conventional interconnect structure is used, then manufacturing simplicity is maintained, but electrical performance and power integrity deteriorate
Solution Approach 1:
The patent segments the power and ground functions into separate dedicated layers. Power conductive segments are arranged in specific layers while ground conductive segments are arranged in adjacent layers, creating a controlled impedance structure. This segmentation improves power integrity by providing dedicated return paths and reducing electromagnetic interference, while the standardized stacked configuration maintains manufacturing simplicity through repeatable layering processes.
Solution Approach 2:
The patent introduces dielectric layers as intermediaries between conductive segments. These dielectric layers provide electrical isolation and controlled impedance matching between adjacent power and ground segments. The intermediary dielectric structure improves power integrity by preventing unwanted coupling and signal interference, while the use of standard dielectric materials and deposition processes maintains manufacturing simplicity.
Data Source
AI summary
A device is provided, including a dielectric layer, a plurality of first conductive segments within the dielectric layer and spaced apart from each other by respective first spacings, and a plurality of second conductive segments within the dielectric layer and spaced apart from each other by respective second spacings. The plurality of second conductive segments may be over and spaced apart from the plurality of first conductive segments by the dielectric layer. A respective one of the first conductive segments may at least partially extend across a corresponding one of the second spacings, and a respective one of the second conductive segments may at least partially extend across a corresponding one of the first spacings.


