Staircase Mask for Semiconductor Pattern Uniformity
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Solution Overview
Problem
Conventional methods for forming semiconductor patterns using liquid semiconductor materials result in non-uniformity in thickness and crystal structure, affecting the performance of thin-film transistors in display panels.
Innovation Solution
A mask with a staircase structure, comprising a first body portion for injecting liquid semiconductor material and a second body portion for gas exhaustion, is used to improve uniformity and crystallization, featuring a supplying conduit and exhausting conduit to control the flow and evaporation processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If liquid semiconductor material is spotted and dried using conventional methods, then the semiconductor pattern is formed, but the thickness uniformity and crystal structure uniformity deteriorate
Solution Approach 1:
The mask is divided into two distinct body portions: a first body portion with a first through hole for material supply, and a second body portion with a second through hole for gas exhaustion. This segmentation allows independent control of material deposition and solvent removal processes, enabling uniform thickness and improved crystal structure quality.
Solution Approach 2:
Different regions of the mask are designed with different functions and structures. The first body portion is optimized for material supply with specific hole geometry, while the second body portion is optimized for gas exhaustion with a staircase structure. This local differentiation enables each region to perform its function optimally, resulting in uniform semiconductor patterns.
2Ease of manufacture
If liquid semiconductor material is used to form patterns, then the process is simple, but the crystal structure uniformity deteriorates
Solution Approach 1:
The mask design changes the physical parameters of the deposition and drying processes. The staircase structure in the second body portion creates controlled gas flow paths that remove solvent uniformly, while the first through hole enables precise material supply. These parameter changes transform the simple spotting process into one that produces uniform crystal structures.
3Device complexity
If the mask uses a single body structure, then the device complexity is low, but the thickness uniformity deteriorates
Solution Approach 1:
The mask is segmented into two body portions with distinct functions. The first body portion supplies liquid semiconductor material through the first through hole, while the second body portion exhausts gas through the second through hole. This segmentation enables independent optimization of material deposition and solvent removal, achieving uniform thickness despite increased structural complexity.
Solution Approach 2:
The second body portion incorporates a staircase structure that adds vertical dimensionality to the gas exhaustion path. This multi-level structure creates controlled gas flow channels that enhance solvent removal uniformity, contributing to improved thickness control in the deposited semiconductor pattern.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The mask system enables the formation of semiconductor patterns with enhanced uniformity and crystallization, improving the thickness and crystal structure, thereby enhancing the performance of thin-film transistors in display panels.
Implementation Method 1
a first through hole configured to allow a liquid semiconductor material to flow from above the first upper surface toward the first lower surface
Implementation Method 2
a second through hole configured to allow a gas to be exhausted from below the second lower surface to above the second upper surface
Data Source
AI summary
A mask for forming a semiconductor pattern includes a first body portion provided with a first through hole for injecting a semiconductor material and a second body portion provided with a second through hole for exhausting a gas. As the result of the gas suction through the second through hole, the semiconductor material may be crystallized to form a semiconductor pattern on a base substrate. A thickness of the semiconductor pattern can be controlled by a space between the mask and the base substrate, and a crystal structure of the semiconductor pattern can be controlled by an amount of the gas to be exhausted through the second through hole.