Standard Cell Active Region Layout Without Tapered Patterns
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Solution Overview
Problem
The increasing demand for high-performance semiconductor devices with high integration levels poses challenges in designing efficient wiring layouts, leading to issues with productivity and electrical performance due to defects caused by tapered patterns in base active regions during the etching process.
Innovation Solution
The semiconductor device design incorporates standard cells arranged in rows with base active regions of varying widths, eliminating tapered patterns by ensuring uniform widths within each row and regular intervals between rows, which improves productivity and electrical performance by reducing process defects and enhancing diversity in standard cell configurations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If tapered patterns are used in base active regions during etching, then manufacturing flexibility is improved, but process defects increase and productivity decreases
Solution Approach 1:
The base active regions are segmented into different width groups (first width and second width) arranged in alternating rows. This segmentation eliminates the need for tapered patterns while maintaining manufacturing flexibility, as each row contains uniform widths that are easier to manufacture without causing process defects.
Solution Approach 2:
The patent introduces asymmetric width variations between adjacent rows rather than within rows. The first rows have base active regions of one width while second rows have base active regions of another width, creating controlled asymmetry that improves productivity by eliminating tapered patterns while preserving design flexibility.
2Adaptability or versatility
If tapered patterns are used in base active regions, then design variability is improved, but electrical performance deteriorates due to process defects
Solution Approach 1:
By segmenting base active regions into uniform width groups within each row and alternating these groups between adjacent rows, the patent maintains design variability through inter-row differences while eliminating intra-row tapered patterns that cause process defects and degrade electrical performance.
Solution Approach 2:
The patent applies local quality by giving different width characteristics to different rows (first rows vs. second rows) while maintaining uniform quality within each row. This local differentiation preserves the necessary design variability for different circuit functions while ensuring high electrical performance through uniform etching within each row.
3Manufacturing precision
If uniform widths are used within each row, then manufacturing precision is improved, but device complexity increases due to multiple width groups
Solution Approach 1:
The patent segments the device into alternating rows with different uniform width characteristics. This segmentation achieves high manufacturing precision within each row by eliminating tapered patterns, while the overall device complexity is managed through a regular alternating pattern rather than arbitrary variations.
Solution Approach 2:
The patent implements periodic action by alternating between first rows with one width configuration and second rows with another width configuration. This periodic pattern simplifies the overall device structure compared to non-uniform designs, as the regular alternation can be systematically manufactured and controlled, reducing actual device complexity despite having multiple width groups.
Data Source
AI summary
A semiconductor device includes first standard cells arranged in a first row on a substrate and respectively including a first base active region, second standard cells arranged in a second row adjacent to the first row and respectively including a second base active region, a power line extending in a first direction along a boundary between the first and second standard cells, and a device isolation layer on side surfaces of the first and second base active regions, wherein, in a plan view, the first standard cells and the second standard cells have a same cell height, the first base active region of each of the first standard cells includes a first active line having a first conductivity-type and a second active line having a second conductivity-type, the second base active region of each of the second standard cells includes a third active line having the first conductivity-type and a fourth active line having the second conductivity-type, the first active lines of the first standard cells arranged in the first row have a same first width, the third active lines of the second standard cells arranged in the second row have a same second width, and the first width is narrower than the second width.