Standard Cell Active Region Spacing for Power Integrity

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Solution Overview

Problem

Integrated circuits face challenges in achieving improved performance and reliability due to limitations in standard cell design, particularly in power integrity and operation speed, which are crucial for reducing development time and enhancing market readiness.

Innovation Solution

The design incorporates standard cells with specific active region configurations and power line enhancements, including increased widths and optimized spacing, to improve power integrity and operation speed, while maintaining the existing structure of standard cells.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If standard cells are designed with conventional active region spacing, then manufacturing is simpler, but power integrity and operation speed are insufficient

Engineering Contradiction:
Improvepower integrityVSAvoidstandard cell structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by creating asymmetric spacing between active regions, where the first spacing (between first and second active regions) differs from the second spacing (between third and fourth active regions). This non-uniform local configuration optimizes power integrity and operation speed in specific areas without requiring complete redesign of all standard cells, thus improving reliability while limiting the increase in device complexity.

Inventive Principle:
Principle #3Local quality

2Speed

If standard cells are designed with conventional active region spacing, then device structure is simpler, but operation speed is insufficient

Engineering Contradiction:
Improveoperation speedVSAvoidstandard cell structure
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent implements local quality by optimizing the spacing between active regions locally within each standard cell. The first spacing and second spacing are configured differently to enhance operation speed in critical areas. This targeted approach improves speed without requiring complete restructuring of all standard cells, thereby limiting the increase in device complexity.

Inventive Principle:
Principle #3Local quality

3Reliability

If power line width is increased to reduce IR drop, then power integrity improves, but manufacturing complexity increases

Engineering Contradiction:
Improvepower integrityVSAvoidmanufacturing process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies parameter changes by optimizing the width of power lines to an appropriate range that reduces IR drop and improves power integrity. Rather than simply increasing power line width indefinitely, the patent identifies and implements an optimal width parameter that achieves the desired power integrity while avoiding excessive manufacturing complexity. This balanced parameter optimization resolves the contradiction between reliability and ease of manufacture.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10990740B2Integrated circuits including standard cells and methods of manufacturing the integrated circuits
Publication Date: 2021.04.27 SAMSUNG ELECTRONICS CO LTD
  • US10990740B2 patent drawing
  • US10990740B2 patent drawing
  • US10990740B2 patent drawing

AI summary

An integrated circuit may include a first standard cell including first and second active regions extending in a first horizontal direction and a first gate line extending in a second horizontal direction orthogonal to the first horizontal direction; and a second standard cell including third and fourth active regions extending in the first horizontal direction and a second gate line aligned in parallel to the first gate in the second horizontal direction and being adjacent to the first standard cell. A distance between the second active region of the first standard cell and the third active region of the second standard cell may be greater than a distance between the first and second active regions of the first standard cell, and may be greater than a distance between the third and fourth active regions of the second standard cell.