Standard Cell Layout With Dopant Stacking for Smaller IC Footprints
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Solution Overview
Problem
The semiconductor industry faces challenges in reducing the footprint of integrated circuits (ICs) while maintaining transistor density and performance, due to the limitations in semiconductor process technology nodes.
Innovation Solution
The implementation of a novel IC design with a N-PPNN-P dopant-stack architecture, which involves rearranging transistor positions and using specific dopant types to reduce empty space between cell arrangements, thereby narrowing the standard cell width and increasing its height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional transistor arrangements are used, then transistor density is maintained, but the IC footprint remains large due to empty space between cell arrangements
Solution Approach 1:
The patent transitions from a two-dimensional planar arrangement of transistors to a three-dimensional stacked arrangement by introducing vertical dopant stacking (N-PPNN-P sequence) between cell layers. This vertical dimension allows transistors to be arranged in multiple layers above each other, effectively reducing the horizontal footprint while maintaining or increasing the total number of transistors per unit area.
Solution Approach 2:
The patent implements nested structures by placing multiple dopant regions (N-type and P-type) within vertically stacked layers. The N-PPNN-P dopant stack creates nested regions where each dopant type is positioned within a specific vertical layer, allowing multiple transistor functions to be nested within a compact vertical space, thereby reducing the overall cell area.
2Area of stationary object
If empty space between cell arrangements is reduced, then IC footprint is minimized, but manufacturing complexity increases due to precise dopant placement requirements
Solution Approach 1:
The patent segments the dopant structure into distinct, standardized layers (N-PPNN-P sequence) with specific doping types and concentrations. Each layer represents a discrete segment that can be independently formed and controlled during manufacturing, breaking down the complex three-dimensional dopant placement into manageable sequential steps that reduce overall manufacturing complexity.
Solution Approach 2:
The patent utilizes controlled changes in dopant concentration, depth, and distribution across the N-PPNN-P stack to achieve precise electrical characteristics. By adjusting parameters such as dopant density, implantation energy, and layer thickness, the design optimizes transistor performance while maintaining manufacturability through well-established semiconductor processing techniques.
Data Source
AI summary
A method of manufacturing an integrated circuit (IC) includes forming a first active region in a first cell. The method further includes forming a plurality of second active regions in a second cell, wherein the second cell abuts the first cell, and a height of the second cell is different from a height of the first cell. The method further includes forming a plurality of gate structures extending across each of the first active region and the plurality of second active regions. The method further includes removing a first portion of a first gate structure of the plurality of gate structures at an interface between the first cell and the second cell, wherein the first portion of the first gate structure is between the first active region and the plurality of second active regions.