Standard Cell Gate Structure With Overlapping Electrodes
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing complexity and integration of semiconductor devices require innovative structural designs to enhance reliability, speed, and multifunctionality, while existing technologies face challenges in efficiently integrating complex gate structures and contact arrangements within standard cells.
Innovation Solution
The design incorporates a semiconductor device with a first and second active region of different conductivity types, a field region, a gate structure with overlapping upper and lower gate electrodes, a gate isolation layer, source/drain regions, and a contact jumper, along with a specific arrangement of conductive lines and contacts to improve integration and power efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If complex gate structures and contact arrangements are integrated to enhance device functionality, then device functionality and integration are improved, but device complexity increases
Solution Approach 1:
The gate structure is divided into multiple gate electrodes (first gate electrode, second gate electrode, third gate electrode) that can be independently controlled. This segmentation allows each gate electrode to control different channels or functions, enhancing device versatility while maintaining manageable structural complexity through modular design
Solution Approach 2:
The gate structure is designed to serve multiple functions: the first gate electrode controls the first channel, the second gate electrode controls the second channel, and the third gate electrode provides additional control. This multi-functional design allows a single gate structure to replace what would traditionally require multiple separate structures, improving functionality without proportionally increasing complexity
2Productivity
If more gate electrodes and contacts are added to improve integration, then integration density is improved, but manufacturing complexity increases
Solution Approach 1:
Multiple gate electrodes are merged into a single integrated gate structure that shares common components such as the gate insulating layer and interlayer insulating layers. This merging approach allows multiple functional elements to be manufactured using similar process steps, reducing overall manufacturing complexity while achieving high integration density
Solution Approach 2:
The gate electrodes are arranged in a nested configuration where the first, second, and third gate electrodes are positioned at different levels and overlap in the plan view. This nesting allows maximum integration density within the available space while using a systematic layering approach that simplifies the manufacturing process through repeated deposition and patterning steps
3Loss of energy
If contact jumpers and interconnection lines are optimized to improve power efficiency, then power efficiency is improved, but device complexity increases
Solution Approach 1:
The contact jumpers are pre-configured to directly connect source/drain regions to the appropriate interconnection lines without requiring additional routing through intermediate contacts. This preliminary arrangement of conductive paths minimizes resistance and parasitic effects, improving power efficiency while the systematic layout keeps interconnection complexity manageable
Solution Approach 2:
The gate isolation layer serves as an intermediary that electrically insulates the gate electrodes from the source/drain regions while allowing the contact jumpers to pass through. This intermediary structure enables direct low-resistance connections for power efficiency while maintaining proper electrical isolation, avoiding the need for complex additional insulation structures
Data Source
AI summary
A semiconductor device including first and second active regions extending in a first direction; a field region between the first and second active regions; a gate structure including an upper gate electrode overlapping the first active region and extending in a second direction crossing the first direction, and a lower gate electrode overlapping the second active region, extending in the second direction, and on a same line as the upper gate electrode; a gate isolation layer between the upper and lower gate electrodes; source/drain regions on respective sides of the upper gate electrode; a contact jumper crossing the upper gate electrode in the first active region and electrically connecting the source/drain regions; and a first upper contact extending in the second direction in the field region and overlapping the lower gate electrode and the gate isolation layer, wherein the upper gate electrode is a dummy gate electrode.