Standard Cell Layout With Segmented Interface for Mixed-Height Rows
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Solution Overview
Problem
Integrated circuits (ICs) face challenges in achieving optimal integration density and performance due to the need for efficient design that balances high operating speed and area requirements, particularly in mixed blocks where high-density and high-performance regions interface, often resulting in inefficient area usage and decreased efficiency.
Innovation Solution
The design of an integrated circuit with distinct regions of high-density and high-performance cells, where the interface region has a reduced area with gate electrodes of the same pitch as the surrounding regions, allowing for efficient interfacing and optimizing performance and area usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If standard cell design methods are used with uniform row heights, then design simplicity is maintained, but area efficiency deteriorates when interfacing high-density and high-performance regions
Solution Approach 1:
The interface region is segmented into multiple sub-regions (first interface region and second interface region) with different configurations. The first interface region has gate electrodes aligned with the high-density region, while the second interface region has gate electrodes aligned with the high-performance region, allowing each segment to optimize for its specific interface requirements
Solution Approach 2:
Different portions of the interface region are given different local characteristics: the first interface region uses a configuration optimized for high-density region interfacing, while the second interface region uses a configuration optimized for high-performance region interfacing, allowing area optimization without compromising overall design simplicity
2Productivity
If different pitch values are used for gate electrodes in high-density and high-performance regions, then regional optimization is achieved, but manufacturing complexity increases
Solution Approach 1:
A single pitch value is used for gate electrodes across both high-density and high-performance regions, allowing the same manufacturing process and design rules to be applied universally. This universal pitch approach maintains manufacturing simplicity while still allowing regional optimization through the segmented interface region configuration
Data Source
AI summary
An integrated circuit includes a first region having a plurality of first cells arranged in first rows extending in a first direction and a plurality of first gate electrodes extending in a second direction that crosses the first direction, a second region having a plurality of second cells arranged in second rows extending in the first direction and a plurality of second gate electrodes extending in the second direction, and a third region between the first region and the second region and having a plurality of third gate electrodes extending in the second direction. A second height of each of the second rows is greater than a first height of each of the first rows. A pitch of the first gate electrodes, a pitch of the second gate electrodes, and a pitch of the third gate electrodes are the same.


