Static Electricity Shielding Member for OLED Transistor Protection
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Solution Overview
Problem
Organic light emitting diode display devices are vulnerable to static electricity, which can cause short-circuits and dark spots due to the thin insulating layers and lack of discharge outlets under scan lines, leading to static electricity accumulation and subsequent transistor damage.
Innovation Solution
Incorporating a static electricity shielding member under the semiconductor layer, along with a sacrifice capacitor connected to the shielding member, to redirect external static electricity away from the transistors, preventing short-circuits and protecting the switching elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a thin insulating layer is used to insulate metals from one another, then the device can be manufactured with standard processes, but the insulating layer becomes vulnerable to static electricity causing short-circuits
Solution Approach 1:
A static electricity shielding member is introduced as an intermediary component between the scan line and the semiconductor layer. This shielding member, positioned in the insulating layer, acts as a mediator to intercept and redirect static electricity away from the vulnerable semiconductor layer, preventing direct discharge through the thin insulating layer while maintaining manufacturing compatibility
Solution Approach 2:
The static electricity shielding member is positioned in advance within the insulating layer before the semiconductor layer is formed. This preliminary placement creates a protective barrier that preemptively redirects static electricity, preventing it from reaching the semiconductor layer and causing short-circuits before the damage can occur
2Ease of manufacture
If no separate pattern is formed under the scan line, then the manufacturing process is simplified, but static electricity introduced into the scan line has no discharge outlet and accumulates causing short-circuits
Solution Approach 1:
The static electricity shielding member serves as an intermediary discharge path within the insulating layer. When static electricity is introduced into the scan line, the shielding member provides a controlled intermediate route to redirect the electricity away from the semiconductor layer, effectively creating a discharge outlet without requiring separate patterns underneath the scan line
Solution Approach 2:
The shielding member converts the potentially harmful static electricity accumulation into a controlled discharge path. By positioning the shielding member to overlap with the semiconductor layer, the harmful static electricity is redirected through the insulating layer to a safe discharge point, transforming the harmful accumulation effect into a beneficial protective discharge mechanism
3Reliability
If the static electricity shielding member is positioned under the semiconductor layer, then external static electricity is transferred to a parasitic capacitor, but additional layers and structures are required
Solution Approach 1:
The static electricity shielding member is formed using the same material and process as the gate electrode, making it a multi-functional element. This shielding member simultaneously serves as part of the gate structure and as a static electricity shield, redirecting external static electricity to the parasitic capacitor while maintaining the gate function, thereby protecting the transistor without requiring completely separate additional layers
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The static electricity shielding member effectively transfers external static electricity to a parasitic capacitor before it can cause a short-circuit between the semiconductor layer and gate electrode, thereby protecting the transistors and preventing dark spots in the display.
Implementation Method 1
the static electricity shielding member positioned under the semiconductor layer and the parasitic capacitor Cst2 connected to the static electricity shielding member are formed and thus the outside static electricity is previously transferred to the parasitic capacitor Cst2 along the static electricity shielding member
Data Source
AI summary
A display device includes: a substrate; a static electricity shielding member formed on the substrate; a scan line formed on the substrate and transferring a scan signal; a data line and a driving voltage line intersecting the scan line, being insulated therefrom and each transferring a data signal and a driving voltage; a thin film transistor formed on the static electricity shielding member; a first sacrifice electrode connected to the static electricity shielding member; and a second sacrifice electrode positioned under the first sacrifice electrode to form a sacrifice capacitor.