Steep-Switch FET With Bi-Stable Resistive System
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Solution Overview
Problem
Conventional Field Effect Transistors (FETs) have a thermally limited subthreshold slope, limiting their ability to achieve arbitrarily fast transitions between 'OFF' and 'ON' states, resulting in a trade-off between low power and high performance.
Innovation Solution
The integration of a Bi-Stable Resistive System (BRS) on the Source and/or Drain of a FET, utilizing materials like insulator-to-metal transition (IMT) materials and threshold-switching selectors, to achieve a sub-thermal subthreshold slope, enabling steep switching capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional FET structure is used, then manufacturing process is simple, but subthreshold slope is thermally limited and switching speed is slow
Solution Approach 1:
The patent merges a Bi-Stable Resistive System (BRS) with the FET structure, integrating two functional systems into a single device. The BRS is formed within the source/drain region, combining the FET's field-effect control with the BRS's bi-stable resistive switching capability, thereby achieving fast switching without requiring a completely new device architecture
Solution Approach 2:
The patent employs composite material structures, specifically using insulator-to-metal transition (IMT) materials or threshold-switching selector materials within the BRS. These materials exhibit dual states (insulating and metallic) that enable steep switching characteristics, combining different material phases to achieve superior electrical performance
2Loss of energy
If conventional FET is used, then device structure is simple, but OFF-state leakage current is high
Solution Approach 1:
The patent merges a Bi-Stable Resistive System (BRS) with the FET structure, integrating two functional systems into a single device. The BRS is formed within the source/drain region, combining the FET's field-effect control with the BRS's bi-stable resistive switching capability, thereby achieving fast switching without requiring a completely new device architecture
Solution Approach 2:
The patent utilizes materials that can dramatically change their electrical resistance parameter. IMT materials transition between insulating and metallic states, and threshold-switching selectors exhibit abrupt resistance changes at specific voltage thresholds. This parameter change mechanism enables the device to achieve very low OFF-state leakage (insulating state) while maintaining high ON-state current (metallic state)
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for sub-kT/q subthreshold slope, significantly reducing the OFF-state leakage current while maintaining high ON-state drive current, enhancing the ION/IOFF ratio and enabling faster switching.
Implementation Method 1
the BRS material comprises an insulator-to-metal transition (IMT) material
Data Source
AI summary
Fabricating a steep-switch transistor includes receiving a semiconductor structure including a substrate, a fin disposed on the substrate, a source/drain disposed on the substrate adjacent to the fin, a gate disposed upon the fin, a cap disposed on the gate, a trench contact formed on and in contact with the source/drain, and a source/drain contact formed on an in contact with the trench contact. A recess is formed in a portion of the source/drain contact using a recess patterning process. A bi-stable resistive system (BRS) material is deposited in the recess in contact with the portion of the source/drain contact. A metallization layer is formed in contact upon the BRS material, a portion of the source/drain contact, the BRS material, and a portion of the metallization layer contact forming a reversible switch.