Stencil Pattern Run Out Correction in Directional Deposition
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Solution Overview
Problem
Pattern run out in directional deposition or etching occurs due to stencil shadowing, limiting the accuracy of pattern deposition or etching on substrates away from the normal to the directional source.
Innovation Solution
A method involving a test substrate with a known stencil thickness, measuring pattern run out as a function of position, adjusting magnification and translational offset for a further substrate, and applying these corrections to ensure accurate deposition or etching of the desired pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a stencil of finite thickness is used in directional deposition or etching, then the stencil provides structural support and pattern definition, but pattern run out occurs causing displacement of the deposited pattern from the stencil pattern
Solution Approach 1:
The invention pre-calculates and applies correction factors to the stencil pattern design before fabrication. By determining the pattern run out displacement as a function of position and stencil thickness, and incorporating these corrections into the stencil pattern, the system compensates for the inevitable shadowing effect that occurs during directional deposition or etching
Solution Approach 2:
The invention changes the parameters of the stencil pattern (position, shape, dimensions) based on calculated correction factors that account for stencil thickness and deposition geometry. These parameter modifications ensure that the final deposited pattern matches the desired pattern despite the shadowing effect
2Area of stationary object
If the substrate is positioned away from the normal to the directional source, then larger substrate area can be processed, but pattern run out increases reducing pattern accuracy
Solution Approach 1:
The invention applies different correction factors to different regions of the stencil pattern based on their position relative to the substrate center. Each local region of the pattern is corrected according to its specific displacement requirements, allowing the entire substrate area to be processed with uniform pattern accuracy despite varying distances from the normal
3Strength
If stencil thickness is increased to improve structural stability, then stencil shadowing increases causing greater pattern displacement
Solution Approach 1:
The invention incorporates stencil thickness as a key parameter in the correction factor calculations. By measuring or specifying the actual stencil thickness and using it to determine the appropriate correction factors, the system compensates for the shadowing effect caused by thicker stencils, maintaining pattern registration accuracy regardless of stencil structural requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method corrects for pattern run out, allowing for precise deposition or etching of patterns on substrates even remote from the directional source, enhancing the accuracy and reliability of the process.
Implementation Method 1
The thickness of the stencil results in stencil shadowing with the pattern on the substrate being slightly displaced from the corresponding portion of the pattern of the stencil
Data Source
AI summary
A method of correcting for pattern run out in a desired pattern in directional deposition or etching comprising the steps ofproviding a test substrate;providing a stencil of known thickness on the test substrate;providing a stencil pattern extending through the stencil to the test substrate.exposing the test substrate through the stencil to a source of directional deposition or etching;comparing the stencil pattern to the pattern on the substrate at a plurality of points along at least one direction to determine pattern run out at said points;fitting the measured pattern run out as a function of position to a function of the formΔX=MX+C where ΔX=pattern run out, X=position on the substrate, M=Magnification and C=translational offset;providing a further substrate at a known position relative to the first;providing a further stencil of known thickness;adjusting the magnification to allow for the difference in stencil thickness between the test stencil and the further stencil;adjusting the transitional offset to allow for the difference in position of the test substrate and further substrate along said direction;providing a desired pattern to be deposited or etched on the further substrate;correcting each point of the desired pattern by the inverse of the determined pattern run out at the point;providing the corrected desired pattern on this further stencil, the pattern extending through the further stencil to the substrate;exposing the further substrate through the further stencil to the directional source of deposition or etching.