Step Coverage Improver for Uniform Thin Films on Complex Substrates
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Solution Overview
Problem
Current technologies face challenges in achieving 100% step coverage and thickness uniformity of thin films on substrates with complex structures, especially at high temperatures, leading to issues with impurity reduction and electrical properties.
Innovation Solution
A step coverage improver is introduced, comprising a compound with a specific structure that forms a uniform deposition layer as a shielded area on the substrate, reducing the deposition rate and thin film growth rate, and improving step coverage and thickness uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If deposition temperature is increased to reduce impurities and improve film quality, then film quality and impurity reduction are improved, but step coverage deteriorates and thin film growth rate increases sharply
Solution Approach 1:
A shielding agent is introduced as an intermediary substance that selectively adsorbs on substrate surfaces to modulate the deposition process. The shielding agent mediates between the high temperature deposition conditions and the substrate, allowing impurity reduction while maintaining step coverage by controlling precursor adsorption in high-aspect-ratio regions
Solution Approach 2:
The shielding agent creates local quality differences on the substrate surface by forming shielded areas with different adsorption characteristics. This allows different regions of the substrate to experience different deposition conditions, enabling uniform step coverage while maintaining overall high film quality through localized control
2Speed
If deposition temperature is increased to reduce thin film growth rate, then thin film growth rate is reduced, but step coverage becomes more difficult to achieve
Solution Approach 1:
The shielding agent acts as a mediator that decouples the relationship between deposition temperature and growth rate. By introducing the shielding agent, the system can operate at higher temperatures for impurity reduction while the shielding agent controls the effective growth rate through selective adsorption, preventing uncontrolled growth in high-aspect-ratio structures
3Speed
If conventional shielding agents are used to reduce thin film growth rate at high temperature, then growth rate is reduced slightly, but step coverage and thickness uniformity are not sufficiently improved
Solution Approach 1:
The patent applies parameter changes by modifying the shielding agent's molecular structure (using specific compounds with defined chemical formulas), adjusting deposition temperature ranges, and optimizing the sequence of shielding agent and precursor introduction. These parameter changes collectively achieve superior thickness uniformity and step coverage compared to conventional approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces impurities and improves the density, electrical properties, and dielectric properties of thin films, even on substrates with complex structures, by controlling the thin film growth rate and enhancing step coverage.
Implementation Method 1
by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the compound
Data Source
AI summary
The present invention relates to a step coverage improver, a method of forming a thin film using the step coverage improver, a semiconductor substrate including the thin film, and a semiconductor device including the semiconductor substrate. According to the present invention, by providing a compound with a predetermined structure as the step coverage improver, by forming a deposition layer with a uniform thickness as a shielded area on a substrate due to the difference in adsorption distribution of the compound, the deposition rate of the thin film may be reduced, and the thin film growth rate may be appropriately reduced. In addition, even when forming a thin film on a substrate with a complex structure, step coverage and the thickness uniformity of a thin film may be improved, and impurities may be greatly reduced.