Step-Down Transistor Contact Layout for Stable Output Voltage
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently stepping down high external source voltages to low internal operating voltages due to insufficient current draw from step-down circuits, primarily attributed to high threshold values of drivers, which are not improved even with increased gate widths.
Innovation Solution
The semiconductor device incorporates a step-down circuit with transistors having a higher number of contacts and vias connected to ground voltage, reducing contact and via resistances, thereby curbing the increase in threshold values and enhancing current drawing-out performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If the gate width of the driver is increased to improve current drawing-out, then the current drawing capability is improved, but the threshold value increase problem persists and device area increases
Solution Approach 1:
The patent applies local quality by making the source electrode structure different from conventional designs. Specifically, the source electrode has a higher number of contacts and vias connected to ground voltage, creating localized improvements in electrical connection quality at the source terminal. This local structural enhancement reduces contact and via resistances specifically at the source electrode, thereby reducing threshold value increase without requiring overall device scaling.
Solution Approach 2:
The patent changes the structural parameters of the source electrode by increasing the number of contacts and vias. This parameter change directly affects the electrical resistance characteristics of the source electrode, reducing contact and via resistances. By modifying these structural parameters rather than simply scaling the device, the invention achieves improved current drawing capability while maintaining stable threshold values.
2Area of stationary object
If process miniaturization is pursued to reduce device size, then device area is reduced, but current drawing-out capability deteriorates due to high driver threshold values
Solution Approach 1:
The patent maintains small device area through process miniaturization while compensating for current drawing capability by improving local quality of the source electrode. The higher number of contacts and vias in the source electrode creates localized electrical pathway improvements that reduce resistance without increasing overall device footprint.
Solution Approach 2:
The patent changes the structural parameters of the source electrode (number of contacts and vias) to compensate for the effects of miniaturization. By increasing these specific parameters locally, the invention maintains adequate current drawing capability despite overall device size reduction.
3Reliability
If the number of contacts and vias in the source electrode is increased, then contact and via resistances are reduced, but device complexity increases
Solution Approach 1:
The patent merges multiple contacts and vias into the source electrode structure, combining their functions into a unified electrical connection system. This merging approach reduces the overall resistance of the source electrode by providing multiple parallel pathways, while the contacts and vias are integrated into a coordinated structure rather than treated as separate elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures that the output voltage is stabilized at the desired level, preventing excessive voltage and improving the stability of semiconductor memory devices by ensuring sufficient current draw.
Implementation Method 1
a source electrode having a higher number of contacts and vias than a drain electrode, and curbing an increase in threshold values by reducing contact and via resistances
Data Source
AI summary
In a semiconductor device 100, at least one of a first transistor and a second transistor that supply a second voltage in a step-down circuit stepping down a first voltage to the second voltage and outputting the second voltage from an output portion is configured such that the number of second contacts of a source electrode which is connected to a ground voltage or is supplied with the first voltage is larger than the number of first contacts connecting a diffusion layer and a first metal layer of a drain electrode connected to the output portion, and the number of second vias of the source electrode connected to the ground voltage or supplied with the first voltage is larger than the number of first vias connecting the first metal layer and a second metal layer of the drain electrode connected to the output portion.