Stepped Contact Plugs for 3D Memory Signal Transmission
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Solution Overview
Problem
In the manufacturing of semiconductor devices with a multilayer structure, existing techniques face challenges in effectively forming contact plugs to independently transmit electrical signals to conductive patterns at different heights, which is crucial for high integration and efficient operation of three-dimensional memory devices.
Innovation Solution
The semiconductor device comprises N stacked groups with alternately stacked interlayer insulating films and conductive patterns, featuring concave portions with stepped sidewalls aligned in a specific direction, allowing for the formation of contact plugs that can be coupled to these patterns, enabling efficient electrical signal transmission. The manufacturing method involves sequential stacking, etching, and the use of mask patterns to create stepped structures with height differences, facilitating the connection of contact plugs to conductive patterns at various heights.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact plugs are formed to independently transmit electrical signals to conductive patterns at different heights, then electrical signal transmission capability is improved, but device complexity increases
Solution Approach 1:
The patent transitions from planar contact plug formation to three-dimensional stepped contact structures. Multiple contact plugs are arranged at different heights and positions, forming a stepped configuration that enables independent electrical signal transmission to conductive patterns at various levels within the multilayer structure, thereby resolving the contradiction between transmission capability and device complexity.
Solution Approach 2:
The contact plug structure is segmented into multiple discrete contact plugs positioned at different heights and locations. Each contact plug independently connects to specific conductive patterns at corresponding heights, allowing separate electrical signal transmission paths. This segmentation enables reliable signal transmission while organizing the complexity into manageable discrete elements.
2Quantity of substance
If multilayer structure with conductive patterns at different heights is formed, then integration density is improved, but manufacturing difficulty increases
Solution Approach 1:
The patent employs preliminary masking and etching actions to define the stepped contact structures before final contact plug formation. Mask patterns are prepared in advance to guide the etching process, creating precise stepped structures that facilitate subsequent contact plug deposition. This preliminary preparation simplifies the overall manufacturing process despite the complex multilayer structure.
Solution Approach 2:
The manufacturing process extends into the vertical dimension by forming stepped contact structures at different heights. This three-dimensional approach allows multiple contact plugs to be formed in a single process sequence rather than requiring separate planar processing steps for each layer, thereby improving integration density while managing manufacturing complexity.
3Adaptability or versatility
If stepped structures with multiple height differences are formed, then contact plug coupling capability is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent utilizes vertical dimensionality to create stepped structures with multiple height levels. Each step provides a coupling surface for contact plugs at corresponding heights, enabling versatile connection to conductive patterns throughout the multilayer structure. The stepped geometry inherently guides alignment and reduces precision requirements compared to flat surface coupling.
Solution Approach 2:
Different regions of the contact structure have different heights and properties tailored to specific coupling requirements. Each stepped level is locally optimized to match the height and position of target conductive patterns, providing adaptive coupling capability while distributing precision requirements across multiple localized features rather than demanding uniform high precision throughout.
Data Source
AI summary
Provided herein is a semiconductor device including N stacked groups (where N is a natural number greater than or equal to two) sequentially stacked over a substrate, each stacked group including interlayer insulating films and conductive patterns alternately stacked, and N concave portions each having stepped sidewalls formed in the interlayer insulating films and the conductive patterns of the stacked groups, the N concave portions each having stepped sidewalls being aligned in a first direction.