Stepped Cavity Resonator Trenches to Limit Etchant Corrosion
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Solution Overview
Problem
Long manufacturing times for semiconductor RF resonator structures expose them to etchant gases, leading to corrosion and defects such as F-pad buildup and metal surface crystal defects, which can render resonators inoperable.
Innovation Solution
A semiconductor die with graduated, step-like resonator trenches of varying depths within a dielectric layer, reducing manufacturing steps and time, thereby minimizing exposure to etchant gases and preventing corrosion, while allowing customization of resonant frequencies through dielectric constant control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional manufacturing processes are used for RF resonator structures, then manufacturing precision can be maintained, but manufacturing time increases leading to corrosion and defects
Solution Approach 1:
The patent segments the resonator structure into multiple trenches with different depths (first, second, and third trenches) that can be formed using separate etching processes. This segmentation allows each trench to be optimized independently while reducing the overall exposure time to etchant gases compared to forming a single deep trench structure, thereby resolving the contradiction between maintaining manufacturing precision and reducing manufacturing time.
Solution Approach 2:
The patent applies preliminary protective actions by forming shallower trenches first (first and second trenches) before forming the deepest trench (third trench). This preliminary action sequence reduces the cumulative exposure time of the resonator structures to etchant gases during manufacturing, preventing corrosion and defects while maintaining the required manufacturing precision for each individual trench.
2Reliability
If multiple etching steps are performed to create resonator trenches, then resonator functionality is achieved, but exposure to etchant gases increases causing corrosion
Solution Approach 1:
The resonator structure is segmented into multiple trenches of varying depths (first trench 132a, second trench 132b, third trench 132c) that can be formed in separate etching steps. This segmentation enables each trench to be etched to its required depth independently, achieving the necessary resonator functionality while minimizing the cumulative exposure time to etchant gases compared to forming all trenches to maximum depth.
Solution Approach 2:
Each trench is given local quality through different depth specifications (first trench having first depth, second trench having second depth greater than first, third trench having third depth greater than second) tailored to its specific resonator function. This local quality approach ensures each trench receives exactly the etching exposure it needs for functionality, preventing over-exposure and corrosion while maintaining resonator performance.
3Adaptability or versatility
If resonator trenches are formed to different depths, then resonant frequency customization is enabled, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is segmented into distinct etching steps for different trenches (first etching for trench 132a, second etching for trench 132b, third etching for trench 132c), where each step targets a specific trench depth. This segmentation enables resonant frequency customization through controlled variation of trench depths while managing manufacturing complexity through systematic, repeatable process steps that can be automated.
Solution Approach 2:
The patent utilizes parameter changes by varying the depth parameter of each trench (first depth, second depth, third depth) to customize resonant frequencies for different resonator functions. This parameter change approach enables adaptability and versatility in resonator design while keeping the manufacturing process relatively simple by focusing changes on a single critical parameter (trench depth) that can be controlled through standard etching process variations.
Data Source
AI summary
Devices and methods of manufacture for a graduated, “step-like,” semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.