Stepped Semiconductor Connection Structure for High Integration
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining proper electrical characteristics and reliability when increasing the number of stacked word lines, which affects the degree of integration in three-dimensionally arranged memory cells.
Innovation Solution
A semiconductor device design featuring a substrate with stepped connection parts, insulating blocks, and intermediate insulating films, along with plug structures, to manage the increased number of stacked word lines and improve integration, while maintaining electrical reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of stacked word lines is increased to improve the degree of integration, then the degree of integration is improved, but electrical characteristics and reliability deteriorate
Solution Approach 1:
The connection structure is divided into multiple stepped levels (first stepped connection part, second stepped connection part, etc.) with corresponding insulating blocks at different vertical levels. This segmentation allows the word lines to be connected in stages, reducing the electrical stress and signal interference that would occur in a single high-density connection layer, thereby maintaining reliability while achieving high integration.
Solution Approach 2:
The patent transitions from a two-dimensional planar connection structure to a three-dimensional stepped structure with multiple vertical levels. By stacking connection parts and insulating blocks vertically, the design achieves higher integration density while distributing electrical loads across multiple levels, preventing the degradation of electrical characteristics that would occur in a compressed 2D layout.
2Productivity
If the number of stacked word lines is increased to improve the degree of integration, then the degree of integration is improved, but manufacturing complexity increases
Solution Approach 1:
The manufacturing process is divided into discrete stages corresponding to each stepped connection part and insulating block. Each level can be fabricated and verified independently before proceeding to the next level, which simplifies the overall manufacturing complexity by breaking down the complex 3D structure into manageable sequential steps rather than requiring simultaneous fabrication of all components.
Solution Approach 2:
Each insulating block is formed in advance to cover and protect the corresponding stepped connection part before subsequent processing steps. This preliminary action ensures that each layer is properly prepared and protected before the next layer is added, reducing manufacturing defects and simplifying the overall fabrication process by establishing a clear sequential workflow.
Data Source
AI summary
A semiconductor device includes a lower stepped connection part at a first vertical level on a substrate, an upper stepped connection part at a second vertical level higher than the first vertical level on the substrate, a lower insulating block contacting each of the plurality of lower conductive pad parts at the first vertical level, an upper insulating block contacting each of the plurality of upper conductive pad parts at the second vertical level, an intermediate insulating film between the lower insulating block and the upper insulating block at a third vertical level between the first and second vertical levels, and a first plug structure extending into the lower stepped connection part, the intermediate insulating film, and the upper insulating block in the vertical direction, wherein a width of the first plug structure in the horizontal direction is greatest at the third vertical level.