Stepped Through-Hole Openings for Multi-Layer Insulating Stacks
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Solution Overview
Problem
In the manufacturing of electronic devices, the etching of multi-layer insulating layers can lead to defects and breakage of through holes, reducing the reliability of the devices due to differences in materials and thicknesses.
Innovation Solution
The implementation of a manufacturing method involving a substrate with a metal composite structure, multiple insulating layers, and a stepped opening profile, where the second opening is greater than the third, and the third is greater than the first, to form a through hole that overlaps these openings, reducing defects and breakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multi-layer insulating layers with different materials and thicknesses are etched to form through holes, then the electrical connection is achieved, but the through holes are prone to defects and insulating layers are easily broken
Solution Approach 1:
The patent divides the through hole formation process into multiple sequential etching steps, each targeting a specific insulating layer. The first etching step forms a first through hole through the first insulating layer, the second etching step forms a second through hole through the second insulating layer, and the third etching step forms a third through hole through the third insulating layer. This segmentation allows each etching process to be optimized for its specific layer thickness and material composition, preventing defects that would occur if all layers were etched simultaneously.
Solution Approach 2:
The patent performs preliminary actions by forming protective structures and guiding layers before the etching process. A protective layer is formed on the metal composite structure before etching the insulating layers. Additionally, guiding layers are formed to define the etching patterns. These preliminary structures protect the metal composite structure from damage during etching and ensure precise alignment of the through holes across multiple layers, preventing breakage of insulating layers.
2Adaptability or versatility
If the insulating layers have different materials and thicknesses, then the device functionality is enhanced, but the through hole formation becomes difficult and defect-prone
Solution Approach 1:
The patent applies local quality by using different etching conditions for different insulating layers. Each insulating layer (first, second, and third) has different material composition and thickness, so the etching process is locally optimized for each layer. The first etching step uses parameters suited for the first insulating layer, the second etching step uses parameters for the second layer, and so on. This local optimization allows the device to maintain enhanced functionality with diverse insulating materials while making the manufacturing process manageable through step-specific parameter adjustment.
Solution Approach 2:
The patent changes etching parameters between different etching steps to match the specific characteristics of each insulating layer. The etching conditions (such as etchant concentration, temperature, time, and power) are adjusted according to the material composition and thickness of each layer. This parameter adaptation enables successful etching of through holes through multi-layer insulating structures with varying properties, making the manufacturing of functionally enhanced devices feasible.
Data Source
AI summary
An electronic device includes a substrate, a metal composite structure, a first insulating layer, and a second insulating layer. The metal composite structure is disposed on the substrate and includes a first metal layer. The first metal layer has a first opening. The first insulating layer is disposed on the metal composite structure and has a second opening. The second insulating layer is disposed on the first insulating layer and has a third opening. In a cross section of the electronic device, the first opening has a first distance, the second opening has a second distance, and the third opening has a third distance. The second distance is greater than the third distance, and the third distance is greater than the first distance.


