Stepped-Trench HEMT Structure for Higher Breakdown Voltage
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Solution Overview
Problem
High electron mobility transistors (HEMTs) face reliability issues due to low breakdown voltage, high electric field, and on-resistance deterioration, which conventional drain field plates are unable to effectively address, limiting improvements in breakdown voltage and integrated circuit size.
Innovation Solution
A high electron mobility transistor design incorporating a semiconductor structure with a stepped trench, where the electrode is disposed within the trench, enhancing breakdown voltage and reducing electric field and on-resistance deterioration speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional drain field plate is provided to resolve reliability issues, then the high electric field at the drain is improved, but the improvement is limited and the integrated circuit size cannot be effectively reduced
Solution Approach 1:
The patent transitions from a conventional planar field plate structure to a stepped trench structure that extends vertically into the semiconductor layers. This dimensional change allows the electrode to interact with multiple layers (barrier layer and channel layer) at different depths, achieving improved breakdown voltage and electric field control while maintaining a compact footprint that reduces integrated circuit size.
Solution Approach 2:
The stepped trench structure embeds the electrode within the semiconductor structure, nesting it into the barrier layer and channel layer. This nested configuration allows the electrode to be integrated within the existing device architecture rather than adding external components, thereby improving reliability without significantly increasing the overall device footprint.
2Reliability
If a conventional drain field plate is provided, then some improvement in high electric field is achieved, but on-resistance deterioration cannot be effectively decreased
Solution Approach 1:
The stepped trench structure creates localized regions with different properties at different depths. The electrode in the stepped trench provides enhanced local field control at the drain region where it is most needed, while the stepped configuration allows different portions of the structure to serve different functions - improving on-resistance characteristics without requiring a complete redesign of the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively increases breakdown voltage and decreases electric field and on-resistance deterioration speed, thereby improving the reliability and performance of high electron mobility transistors.
Implementation Method 1
In the channel layer, a two-dimensional electron gas is formed at an interface between the channel layer and the barrier layer
Implementation Method 2
The stepped trench is disposed in the semiconductor structure. The electrode is disposed in the stepped trench... the breakdown voltage could be increased and the electric field and the on-resistance deterioration speed could be decreased
Data Source
AI summary
A high electron mobility transistor includes a semiconductor structure, a stepped trench, an electrode, and a gate. The semiconductor structure includes a barrier layer and a channel layer. The barrier layer is disposed on the channel layer. A two-dimensional electron gas is formed at an interface between the channel layer and the barrier layer. The stepped trench is disposed in the semiconductor structure. The electrode is disposed in the stepped trench. The gate is disposed on the barrier layer. The stepped trench has a first width and a second width. The first width is greater than the second width.