Stepped Word Line Layout to Minimize Bridging in 3D Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of three-dimensional memory devices is limited by the bridge phenomenon between word lines, which affects the performance and efficiency of memory devices, and existing manufacturing methods do not adequately address this issue.
Innovation Solution
A memory device design featuring a stepped structure of gate conductive patterns and gate contact structures, where the gate conductive patterns are sequentially stacked with varying lengths and connected by gate contact structures, and a manufacturing method that includes forming interlayer insulating layers, sacrificial layers, and conductive patterns to minimize the bridge phenomenon and enhance integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional memory device integration is increased, then device capacity and density are improved, but bridge phenomenon between word lines occurs affecting performance
Solution Approach 1:
The gate conductive pattern is segmented into multiple horizontal parts (first horizontal part, second horizontal part, third horizontal part) with different lengths extending to the contact region. This segmentation allows each part to be independently optimized, preventing the bridge phenomenon while maintaining high integration. The first gate conductive pattern has a shorter extension length than the second gate conductive pattern, creating spatial separation that eliminates unwanted bridging.
Solution Approach 2:
Different horizontal parts of the gate conductive pattern have different local properties - specifically different lengths extending to the contact region. The first horizontal part extends a shorter distance while the second horizontal part extends a longer distance. This local differentiation allows the structure to maintain electrical connectivity where needed while preventing bridge formation in other areas, thus resolving the contradiction between integration and performance.
2Reliability
If gate conductive patterns are extended to contact region, then electrical connection is improved, but bridge phenomenon occurs between adjacent word lines
Solution Approach 1:
The gate conductive patterns exhibit asymmetric design where the first gate conductive pattern and second gate conductive pattern have different extension lengths to the contact region. The second pattern extends farther than the first pattern, creating an asymmetric configuration that provides adequate electrical connection for the second pattern while the first pattern's shorter extension prevents it from reaching far enough to cause bridging. This asymmetric approach resolves the contradiction by optimizing each pattern's reach independently.
Solution Approach 2:
The solution addresses the bridging problem by introducing dimensional variation in the horizontal extension length of different gate conductive patterns. Instead of all patterns extending uniformly to the contact region, the patent varies the extension length across different patterns (first vs. second horizontal parts), using this dimensional differentiation to prevent unwanted electrical connections while maintaining necessary connectivity for memory operation.
3Ease of manufacture
If wiring structure is simplified, then manufacturing process is easier, but structural support in contact region is reduced
Solution Approach 1:
The gate conductive patterns are designed with predetermined different extension lengths during the manufacturing process itself, rather than requiring additional post-processing or complex wiring adjustments. The first and second horizontal parts are formed with their specific extension lengths integrated into the base manufacturing steps, providing both the necessary structural support and simplified wiring in a single coordinated action.
Solution Approach 2:
The gate conductive pattern structure serves multiple functions simultaneously: it provides electrical connection to the contact region, prevents bridge phenomenon through differential extension lengths, and offers structural support in the contact region. The first and second horizontal parts work together as a unified structure that accomplishes connectivity, prevention, and support functions without requiring separate dedicated components, thus achieving ease of manufacture while maintaining strength.
Data Source
AI summary
There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first gate conductive pattern including a first horizontal part and a second horizontal part and a third horizontal part connected to one end portion of the first horizontal part; a first insulating pattern disposed between the first horizontal part and the second horizontal part of the first gate conductive pattern; and a second gate conductive pattern including a first horizontal part and a second horizontal part and a third horizontal part connected to one end portion of the second horizontal part of the second gate conductive pattern; a first gate contact structure extending vertically on a contact region, the first gate contact structure being in contact with the first gate conductive pattern while penetrating the third horizontal part of the first gate conductive pattern.