Stepwise Pad Alignment for Single-Perforation TSV Stacking
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Solution Overview
Problem
Conventional die stacking technologies for memory devices require individual perforation of each die, prolonging the manufacturing process and increasing costs due to additional procedures and complexity.
Innovation Solution
A method involving a first die with a pad and multiple second dies with pads, where the pads are arranged in a stepwise manner, allowing for a single perforation process to form a connecting hole through the second dies, and a conductive body is filled to connect the pads, reducing the number of perforation steps and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If individual TSV perforation is performed on each die, then reliable connectivity between dies is achieved, but manufacturing process time and complexity significantly increase
Solution Approach 1:
Multiple individual die perforation operations are merged into a single group perforation operation. The method stacks multiple dies with their TSVs aligned, then performs one perforation operation through all dies simultaneously, creating multiple TSVs in parallel. This combining approach maintains the reliability of individual TSV connections while dramatically reducing the total number of perforation steps required.
Solution Approach 2:
The manufacturing process is segmented into distinct phases: die preparation with pre-formed TSVs, stacking alignment, group perforation, and conductive filling. By segmenting the process this way, the patent enables parallel processing where multiple dies are handled as a group rather than individually, reducing overall manufacturing time while maintaining connection reliability through systematic alignment and perforation.
2Manufacturing precision
If individual TSV formation is performed on each die, then precise control of conductive components is achieved, but device complexity and manufacturing cost increase
Solution Approach 1:
TSV holes and conductive components are pre-formed in each die before stacking. This preliminary action ensures precise positioning is achieved during individual die fabrication when conditions are controlled, rather than attempting to align and form TSVs after stacking. The pre-formed TSVs with conductive components are then stacked with precise alignment, maintaining manufacturing precision while simplifying the overall process by eliminating post-stack perforation steps for each die.
Solution Approach 2:
The group stacking and perforation method serves multiple functions simultaneously: it creates TSV connections across multiple dies, establishes alignment references, and forms conductive paths in parallel. This multi-functional approach reduces device complexity by consolidating multiple separate operations into a unified process that achieves several objectives at once.
Data Source
AI summary
A memory device, a semiconductor device and their manufacturing methods are provided. One of the methods may include: providing a first die and a plurality of second dies, the first die having a first pad, each of the plurality of second dies having a second pad; stacking the plurality of second dies on the first die, the second pads and the first pad arranged in a stepwise manner, and projections of the second pads of any two adjacent second dies on the first die partially overlapped; forming a connecting hole passing through the second dies; and forming a conductive body filling the connecting hole and connecting the first pad and the second pads. This method simplifies the manufacturing process of a semiconductor device, reduces the cost thereof, and improves the production yield.