Sterically Hindered Amide Organometallic Precursors for CVD
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Solution Overview
Problem
The semiconductor industry faces a need for stable, volatile, and uniform chemical vapor deposition precursors, particularly for lanthanide-based materials like oxides and silicates, which often form dimers or adducts, limiting their availability for thin film deposition applications.
Innovation Solution
Development of organometallic compounds with steric bulk and suitable molecular weight, represented by the formula M(NR1R2)x, that maintain a monomeric structure and coordination number equal to the oxidation state of M, allowing for volatility suitable for vapor deposition, and production through a process involving nitrogen-containing compounds and metal source compounds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If lanthanide-based materials are used as chemical vapor deposition precursors, then films of desired composition can be formed, but the compounds form dimers, higher oligomers, and/or adducts which severely limits availability of stable compounds with sufficient volatility
Solution Approach 1:
The patent introduces bulky amide ligands with specific local steric properties around the lanthanide center. These ligands create a localized steric environment that prevents dimerization and oligomerization while maintaining the desired chemical composition and stability for film formation.
Solution Approach 2:
The patent changes the coordination number and steric parameters of the lanthanide complex by selecting specific amide ligands with controlled bulk. This parameter adjustment transforms the precursor from a dimerizing system to a monomeric or capped species with sufficient volatility for chemical vapor deposition.
2Ease of operation
If organometallic compounds with increased steric bulk are used to maintain monomeric structure, then volatility suitable for vapor deposition is achieved, but molecular weight increases which may affect deposition efficiency
Solution Approach 1:
The patent optimizes the balance between steric bulk and molecular weight by selecting amide ligands with specific R groups. The ligands provide sufficient steric protection to maintain monomeric structure and volatility while keeping the overall molecular weight within acceptable ranges for efficient vapor deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resulting organometallic compounds provide improved thermal stability, volatility, and uniform film deposition with reduced impurities, suitable for next-generation semiconductor devices, including dielectrics, barriers, and electrodes.
Implementation Method 1
a vapor phase chemical vapor deposition precursor can be contacted with a substrate that is heated to a temperature higher than the decomposition temperature of the precursor, to form a metal or metal oxide film on the substrate
Implementation Method 2
a chemical vapor deposition precursor, also known as a chemical vapor deposition chemical compound, is decomposed thermally, chemically, photochemically or by plasma activation, to form a thin film having a desired composition
Implementation Method 3
a substrate that is heated to a temperature higher than the decomposition temperature of the precursor
Data Source
AI summary
This invention relates to organometallic compounds represented by the formula M(NR1R2)x wherein M is a metal or metalloid, R1 is the same or different and is a hydrocarbon group or a heteroatom-containing group, R2 is the same or different and is a hydrocarbon group or a heteroatom-containing group; R1 and R2 can be combined to form a substituted or unsubstituted, saturated or unsaturated cyclic group; R1 or R2 of one (NR1R2) group can be combined with R1 or R2 of another (NR1R2) group to form a substituted or unsubstituted, saturated or unsaturated cyclic group; x is equal to the oxidation state of M; and wherein said organometallic compound has (i) a steric bulk sufficient to maintain a monomeric structure and a coordination number equal to the oxidation state of M with respect to anionic ligands, and (ii) a molecular weight sufficient to possess a volatility suitable for vapor deposition; a process for producing the organometallic compounds, and a method for producing a film or coating from organometallic precursor compounds.