STI Heat-Removal Structure for Lower Junction Temperature
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Solution Overview
Problem
The increasing number of transistors on semiconductor chips leads to elevated junction temperatures due to inadequate heat dissipation, exacerbated by the low thermal conductivity of silicon dioxide and silicon, which slows down transistor speed and necessitates higher power consumption, creating a significant thermal management challenge for chip integration.
Innovation Solution
The integration of high thermal conductivity materials, such as Boron-Nitride or Aluminum-Nitride, within shallow trench isolation regions to form Horizontal Heat-Dissipation Plates and Vertical Heat-Dissipation Columns, which enhance thermal dissipation paths directly connected to the chip edge for efficient heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of transistors on the chip is increased to achieve higher integration, then the computing power and functionality are improved, but the heat dissipation capability deteriorates due to limited thermal conductivity of silicon and silicon dioxide
Solution Approach 1:
The patent replaces traditional silicon dioxide isolation layers with composite material structures including shallow trench isolation regions filled with materials having higher thermal conductivity, horizontal heat dissipation plates made of high thermal conductivity materials, and vertical heat dissipation columns. This composite approach enables effective heat removal while maintaining electrical isolation, resolving the contradiction between high integration and heat dissipation.
Solution Approach 2:
The heat dissipation function is segmented into multiple components: shallow trench isolation regions for localized heat management, horizontal heat dissipation plates for lateral heat distribution, and vertical heat dissipation columns for upward heat removal. This segmentation allows each component to address specific thermal challenges, enabling high integration while maintaining temperature control.
2Temperature
If conventional heat dissipation methods such as liquid cooling circulation outside the packaged chip are used, then some heat removal is achieved, but the cost increases significantly and the efficiency for reducing junction temperatures remains low
Solution Approach 1:
The heat dissipation structures are integrated into the semiconductor device during the front-end-of-line (FEOL) manufacturing process, before packaging. The shallow trench isolation regions, horizontal heat dissipation plates, and vertical heat dissipation columns are formed as part of the device fabrication, eliminating the need for costly post-packaging cooling solutions and reducing overall manufacturing costs while effectively lowering junction temperatures.
3Productivity
If the transistor dimensions are made smaller to increase integration density, then the number of transistors increases, but the percentage of oxide coverage increases and thermal dissipation capability across device junctions is further aggregated
Solution Approach 1:
The patent implements localized heat dissipation structures at the transistor level, including shallow trench isolation regions surrounding individual transistors and vertical heat dissipation columns positioned beneath specific device junctions. This local quality approach ensures that each transistor has dedicated thermal pathways, preventing thermal aggregation even as integration density increases and oxide coverage expands.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces transistor temperatures, enabling faster operation and supporting the transition from Giga Scale to Tera Scale Integration by creating a direct and efficient heat dissipation network within the semiconductor die.
Implementation Method 1
the thermal conductivity of the heat removing layer is higher than that of SiO2
Data Source
AI summary
Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.