STI Heat Removal Layer for Lower Junction Temperature
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Solution Overview
Problem
The increasing number of transistors on semiconductor chips leads to elevated junction temperatures due to inadequate heat dissipation, which slows down transistor speed and necessitates higher power consumption, exacerbating the heat dissipation problem.
Innovation Solution
The integration of a heat remover (HR) structure within the semiconductor die during monolithic processes, utilizing materials with higher thermal conductivity than SiO2, to enhance thermal dissipation across the die and connect to external heat sinks for efficient heat removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of transistors on the chip is increased to achieve higher integration, then the productivity and functionality of the chip is improved, but the heat dissipation capability deteriorates and junction temperature rises
Solution Approach 1:
The patent applies local quality by replacing the standard SiO2 material in specific STI regions with high thermal conductivity materials (such as diamond, cubic boron nitride, or silicon carbide) only in the heat removing layer. This localized material substitution creates thermal pathways precisely where heat dissipation is most critical - adjacent to active regions - while maintaining the electrical isolation function of SiO2 in other areas. The heat removing layer is positioned to form thermal contact with active regions, creating localized high-performance thermal management zones within the chip structure.
Solution Approach 2:
The patent employs composite materials by creating a multi-layer STI structure that combines SiO2 with high thermal conductivity materials. The STI region contains both the electrical insulation properties of SiO2 and the thermal conduction properties of materials like diamond or cubic boron nitride in the heat removing layer. This composite approach allows simultaneous achievement of electrical isolation and enhanced heat dissipation, resolving the contradiction between maintaining electrical properties and improving thermal management in high-density transistor configurations.
2Reliability
If conventional SiO2 material is used in STI regions, then the electrical insulation is maintained, but the thermal conductivity is insufficient for effective heat dissipation
Solution Approach 1:
The patent applies local quality by replacing the standard SiO2 material in specific STI regions with high thermal conductivity materials (such as diamond, cubic boron nitride, or silicon carbide) only in the heat removing layer. This localized material substitution creates thermal pathways precisely where heat dissipation is most critical - adjacent to active regions - while maintaining the electrical isolation function of SiO2 in other areas. The heat removing layer is positioned to form thermal contact with active regions, creating localized high-performance thermal management zones within the chip structure.
Solution Approach 2:
The patent employs composite materials by creating a multi-layer STI structure that combines SiO2 with high thermal conductivity materials. The STI region contains both the electrical insulation properties of SiO2 and the thermal conduction properties of materials like diamond or cubic boron nitride in the heat removing layer. This composite approach allows simultaneous achievement of electrical isolation and enhanced heat dissipation, resolving the contradiction between maintaining electrical properties and improving thermal management in high-density transistor configurations.
3Temperature
If external liquid cooling or heat removal pads are used, then heat dissipation is improved, but the manufacturing cost and device complexity increase significantly
Solution Approach 1:
The patent merges the electrical isolation function of STI regions with the heat dissipation function by integrating high thermal conductivity materials directly into the STI structure. This consolidation eliminates the need for separate external cooling systems, heat removal pads, or liquid cooling mechanisms. The heat removing layer within the STI region serves dual purposes: maintaining electrical isolation between active regions and providing efficient thermal pathways, thereby simplifying the overall device structure while achieving effective heat management.
Solution Approach 2:
The patent applies self-service by enabling the STI region itself to perform heat dissipation functions through the integrated heat removing layer. Rather than requiring external cooling infrastructure, the chip structure uses its own internal STI regions with high thermal conductivity materials to actively manage heat generation. The heat removing layer is positioned to thermally connect with active regions, allowing the device to self-regulate temperature through its inherent structural elements without additional cooling subsystems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively reduces transistor junction temperatures, improves transistor speed, and mitigates the heat dissipation challenge, enabling more efficient and reliable operation of semiconductor chips.
Implementation Method 1
the thermal conductivity of the heat removing layer is higher than that of SiO2
Data Source
AI summary
Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.