Composite STI Heat Removal Paths for High-Density Semiconductor Dies
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Solution Overview
Problem
The increasing number of transistors on semiconductor chips leads to elevated junction temperatures due to inadequate heat dissipation, which slows down transistor speed and necessitates higher power consumption, exacerbating the heat dissipation problem.
Innovation Solution
The integration of a heat removing (HR) structure within the semiconductor die, utilizing materials with higher thermal conductivity than SiO2, such as metal layers and thin insulating layers, to create a composite-material STI region that extends across the die and connects to external heat sinks for enhanced thermal dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of transistors on the chip is increased to achieve higher integration, then the computing power and functionality are improved, but the junction temperature and die temperature rise due to insufficient heat dissipation capability
Solution Approach 1:
The patent replaces traditional SiO2 isolation material with composite materials having higher thermal conductivity, such as diamond-like carbon ( DLC) layers combined with metal layers (e.g., tungsten, copper). This composite structure maintains the electrical insulation properties while significantly improving heat dissipation capability, allowing higher transistor integration without excessive temperature rise
Solution Approach 2:
The patent changes the thermal conductivity parameter of the isolation material from the low value of SiO2 to high values achieved through DLC and metal layer composites. This parameter change enables efficient heat removal paths while maintaining the structural and electrical requirements for high-density transistor integration
2Reliability
If traditional SiO2 isolation material is used to maintain electrical insulation, then device reliability is ensured, but thermal conductivity remains low causing heat dissipation problems
Solution Approach 1:
The patent creates a multi-layer composite structure where DLC provides both electrical insulation and high thermal conductivity, while metal layers enhance the thermal conductivity further. This composite approach maintains the required electrical insulation for device reliability while solving the heat dissipation problem through superior thermal transport properties
Solution Approach 2:
The DLC layer acts as an intermediary between the SiO2 isolation structure and the metal heat-conducting layers. It provides a transition that maintains electrical insulation while enabling efficient thermal coupling to the metal layers, thereby bridging the gap between electrical isolation requirements and thermal management needs
3Temperature
If external cooling methods such as liquid cooling circulation are used to reduce die temperature, then heat dissipation is improved, but manufacturing cost increases significantly
Solution Approach 1:
The patent implements self-service heat dissipation by integrating high thermal conductivity materials directly into the chip structure during manufacturing. The chip structure itself provides the heat dissipation function through the DLC and metal layer composites in the isolation regions, eliminating the need for complex external cooling systems and reducing manufacturing costs
Solution Approach 2:
The patent incorporates heat dissipation capabilities during the chip fabrication process itself, before the chip is packaged or deployed. By pre-integrating the high thermal conductivity isolation structures, the chip is prepared with inherent heat dissipation ability, avoiding the need for costly post-manufacturing cooling solutions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively increases the thermal dissipation area and reduces junction temperatures, thereby improving transistor speed and reducing power consumption, while also providing a scalable heat dissipation network within the die.
Implementation Method 1
the thermal conductivity of the heat removing layer is higher than that of SiO2
Data Source
AI summary
Semiconductor circuit structures with direct die heat removal structure are provided. The semiconductor circuit structure comprises a semiconductor substrate with an original semiconductor surface; a set of active regions within the semiconductor substrate; and a first shallow trench isolation (STI) region neighboring to the set of active regions and extending along a first direction. Wherein the first STI region includes a heat removing layer, and the material of the heat removing layer is different from SiO2.