Stop-Island Dicing Street Layout for GaN Thin-Film Split Control
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Solution Overview
Problem
GaN thin films in semiconductor devices tend to split during the dicing process due to stress and adhesion issues, leading to potential malfunction of the transistors.
Innovation Solution
The implementation of stop islands made of SiN film at the intersections of dicing streets, with specific dimensions relative to the dicing streets, to prevent the propagation of splits in the GaN thin film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating film is removed in dicing streets to prevent peeling, then the protective function is improved, but the GaN thin film splits due to stress and adhesion loss
Solution Approach 1:
The patent divides the dicing street region into multiple segments by introducing stop islands at regular intervals. This segmentation prevents the continuous propagation of splits through the GaN thin film while still allowing the insulating film to be removed for preventing peeling. The stop islands act as discrete barriers that interrupt stress propagation paths.
Solution Approach 2:
The stop islands serve as intermediary structures between the removed insulating film regions and the GaN thin film. These islands provide mechanical support and stress distribution at critical locations, mediating the conflict between needing to remove insulating film for adhesion prevention and maintaining GaN film integrity.
2Reliability
If the insulating film is removed in dicing streets, then peeling prevention is improved, but manufacturing complexity increases due to additional stop island formation
Solution Approach 1:
The stop island formation process is merged with the existing insulating film removal process. Both operations are performed in the same dicing street regions, combining multiple functions into a single structural modification approach. This reduces overall process complexity compared to treating them as separate operations.
Solution Approach 2:
The stop islands are introduced only in specific locations within the dicing streets where stress concentration and split propagation are most likely to occur. This localized approach maintains simplicity in regions where it is not needed while providing enhanced protection only where necessary, optimizing the balance between reliability and complexity.
3Reliability
If stop islands are made larger to better prevent split propagation, then the protective effect is improved, but the area available for element regions decreases
Solution Approach 1:
Rather than using one large stop island, the patent employs multiple smaller stop islands distributed along the dicing streets. This segmentation achieves effective split propagation prevention through cumulative effect of multiple barriers while preserving more total area for element regions compared to a single large island.
Solution Approach 2:
The stop islands are designed with dimensions that are sufficient to prevent split propagation but not excessively large. This partial action approach provides just enough protection to solve the problem while minimizing the area consumed from element regions, avoiding over-engineering.
Data Source
AI summary
A split in a dicing street in a semiconductor film is prevented. A semiconductor device includes: a first dicing street passing between a plurality of element regions on which a plurality of protective films are formed one-to-one, the first dicing street extending along a first axis; a second dicing street passing between the plurality of element regions and extending along a second axis; and a stop island disposed on the upper surface of the semiconductor film at an intersection between the first dicing street and the second dicing street, the stop island being in non-contact with the plurality of element regions. X_si>X_ds and Y_si<Y_ds are satisfied.