Interconnection Structure With Stopping Pattern for Uniform Top-Via Etching
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Solution Overview
Problem
The top-via module process for forming conductive patterns in integrated circuit devices results in undesirable variations in conductive line shapes, profiles, and heights due to the use of etching processes, leading to non-uniform resistance and performance issues.
Innovation Solution
Incorporating a stopping pattern between conductive lines and vias, aligned with their side surfaces, using materials with etch selectivity to ensure uniform widths and coplanar surfaces, and employing a consistent etching process for conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If etching process is used to form conductive patterns in top-via module process, then conductive lines and vias can be formed, but non-uniform shapes, profiles, and heights are caused leading to resistance variations
Solution Approach 1:
The patent applies preliminary action by forming a stopping pattern (made of material with different etch selectivity) before forming the conductive patterns. This stopping pattern serves as a pre-established reference structure that guides the etching process to achieve uniform conductive line shapes, profiles, and heights. The stopping pattern is formed in advance to control the etching depth and shape of the conductive patterns, preventing the non-uniformity issues that would otherwise occur during the etching process.
Solution Approach 2:
The stopping pattern acts as an intermediary element between the substrate and the conductive patterns. It mediates the etching process by providing a reference structure with different etch selectivity, allowing the etching process to achieve uniform conductive line dimensions without directly etching the conductive material to its final shape. This intermediary structure enables precise control over the conductive pattern geometry while maintaining process simplicity.
2Ease of manufacture
If top-via module process is used instead of damascene process, then manufacturing cost is reduced, but conductive line shape control and uniformity deteriorate
Solution Approach 1:
The stopping pattern is formed in advance as a preliminary structure to guide the subsequent etching process. This pre-formed reference structure enables the simplified top-via module process to achieve uniform conductive line profiles without requiring the more complex damascene process. The stopping pattern establishes the desired geometry early in the process, allowing cost-effective formation of uniform conductive interconnects.
Solution Approach 2:
The patent utilizes parameter changes by selecting materials with different etch selectivity for the stopping pattern compared to the conductive material. This difference in etch selectivity (a material parameter) allows the stopping pattern to serve as a stable reference during etching, enabling uniform conductive line formation through the simpler top-via module process while maintaining precision that would otherwise require more expensive processes.
3Device complexity
If etching process is used for patterning conductive materials, then process complexity is reduced, but resistance uniformity and device performance deteriorate
Solution Approach 1:
The stopping pattern is formed as a preliminary reference structure before the conductive patterns are etched. This pre-established structure with different etch selectivity guides the etching process to achieve uniform conductive line dimensions and profiles. By having this reference in place beforehand, the simple etching process produces uniform resistance characteristics, improving device reliability without increasing process complexity.
Solution Approach 2:
The stopping pattern serves as an intermediary reference structure that mediates between the etching process and the final conductive pattern geometry. It enables the simple etching process to achieve uniform resistance by providing a stable reference that controls the etching depth and shape, thereby ensuring resistance uniformity and device performance while maintaining low process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves uniformity in conductive line structures, reducing resistance variations and enhancing the performance consistency of integrated circuit devices.
Implementation Method 1
The stopping pattern may have an etch selectivity with the conductive via. The stopping pattern may have an etch selectivity with the lower conductive line.
Data Source
AI summary
According to some embodiments of the inventive concepts, an integrated circuit device may be provided. The integrated circuit device may include a lower conductive line, a conductive via on the lower conductive line and a stopping pattern between the lower conductive line and the conductive via. A side surface of the stopping pattern may be aligned with the side surface of the lower conductive line and the side surface of the conductive via.