Storage Write Cache Rate Control Under Buffer Memory Limits

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Solution Overview

Problem

Flash memory-based storage devices face performance degradation due to limited buffer memory capacity during continuous or large-scale write operations, leading to increased latency and reduced efficiency.

Innovation Solution

A storage device with a buffer memory device featuring a write cache region and internal traffic region, controlled by a performance manager that adjusts cache processing and command fetch rates based on write cache levels to maintain optimal performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If write data is stored in a buffer memory device with limited capacity, then write performance is improved, but the buffer memory capacity is insufficient during continuous or large-scale write operations

Engineering Contradiction:
Improvewrite performanceVSAvoidbuffer memory capacity
Core Design Contradiction:
ProductivityVSQuantity of substance

Solution Approach 1:

The buffer memory device is divided into multiple regions (first buffer region, second buffer region, third buffer region) with different functions and capacities. The first buffer region stores write data, the second buffer region stores data for maintenance operations, and the third buffer region provides additional storage capacity. This segmentation allows the system to maintain high write performance while effectively utilizing the limited total buffer capacity by distributing data across multiple specialized regions.

Inventive Principle:
Principle #1Segmentation

2Reliability

If write cache processing rate is increased to prevent buffer overflow, then write cache level is controlled, but processing time and energy consumption increase

Engineering Contradiction:
Improvewrite cache level controlVSAvoidprocessing time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The cache processing rate is dynamically adjusted based on the current write cache level. When the write cache level is high, the cache processing rate is increased to prevent buffer overflow. When the write cache level is low, the cache processing rate is reduced to minimize processing time and energy consumption. This dynamic adjustment mechanism allows the system to maintain reliable write cache level control while optimizing processing efficiency based on real-time conditions.

Inventive Principle:
Principle #15Dynamics

3Productivity

If continuous write operations are performed, then data throughput is improved, but buffer memory capacity is exhausted leading to performance degradation

Engineering Contradiction:
Improvedata throughputVSAvoidperformance stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The system continuously monitors the write cache level and uses this feedback information to adjust the cache processing rate. When the write cache level approaches the buffer memory capacity limit, the feedback mechanism triggers an increase in the cache processing rate to flush data to the nonvolatile memory device. This feedback control prevents buffer overflow and maintains performance stability during continuous write operations, allowing the system to sustain high data throughput without exhausting buffer memory capacity.

Inventive Principle:
Principle #23Feedback

Data Source

PatentUS12561089B2Storage device with variable processing rate and operation method thereof
Publication Date: 2026.02.24 SAMSUNG ELECTRONICS CO LTD
  • US12561089B2 patent drawing
  • US12561089B2 patent drawing
  • US12561089B2 patent drawing

AI summary

An operating method of a storage device includes fetching, from an external host device, write command and write data, based on a 0-th fetch rate, storing the write data in a write cache region of a buffer memory device of the storage device, performing write cache processing with respect to the write cache region, based on a 0-th cache processing rate, the performing write cache processing including storing, in a nonvolatile memory device of the storage device, the write data of the write cache region, detecting a write cache level of the write cache region, and controlling the 0-th cache processing rate, based on the write cache level.