Storage Capacitor Patterned with Gate Electrode in Display Device
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Solution Overview
Problem
The complexity of high-definition display devices, such as LCDs and OLEDs, requires intricate electrical structures with numerous lines and devices, leading to challenges in efficient manufacturing and capacitance optimization without additional mask processes.
Innovation Solution
A display device and manufacturing method featuring a storage capacitor with electrodes and a dielectric layer having the same pattern, formed simultaneously using the same mask process, where the first electrode functions as a gate electrode for a second TFT, and materials with different etch selectivities are used to ensure sufficient capacitance without additional mask steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If additional mask processes are used to form storage capacitors with sufficient capacitance, then capacitance is improved, but manufacturing complexity and process time increase
Solution Approach 1:
The patent combines the formation of the storage capacitor first electrode with the gate electrode formation process by using the same mask pattern. This merging of functions allows the storage capacitor electrode to be formed simultaneously with the gate electrode, eliminating the need for additional mask processes while ensuring sufficient capacitance through optimized overlapping area with the active layer
Solution Approach 2:
The mask pattern serves multiple functions: it defines both the gate electrode and the storage capacitor first electrode in a single exposure and development process. This multi-functionality reduces the total number of photolithography steps required while maintaining the electrical characteristics needed for both components
2Reliability
If additional mask processes are used to form storage capacitors with sufficient capacitance, then capacitance is improved, but manufacturing time increases
Solution Approach 1:
The patent combines the formation of the storage capacitor first electrode with the gate electrode formation process by using the same mask pattern. This merging of functions allows the storage capacitor electrode to be formed simultaneously with the gate electrode, eliminating the need for additional mask processes while ensuring sufficient capacitance through optimized overlapping area with the active layer
Solution Approach 2:
The storage capacitor first electrode is formed in advance during the gate electrode formation process, before subsequent processing steps. This preliminary action ensures that the capacitor structure is already in place with sufficient overlapping area to provide required capacitance, eliminating the need for later capacitor-specific processing steps
Data Source
AI summary
A display device is disclosed. In one aspect, the device includes a plurality of pixels. Each of the pixels includes a first thin-film transistor (TFT) formed over a substrate and comprising gate electrode, a source electrode, and a drain electrode. Each pixel also includes a storage capacitor formed over the substrate, wherein the storage capacitor includes first and second electrodes, and a dielectric layer interposed between the first and second electrodes. The first electrode, the dielectric layer, and the second electrode have substantially the same pattern.