Semiconductor Storage Contact Electrode Insulating Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor storage devices face challenges in manufacturing due to issues with contact hole formation, leading to potential short-circuiting of conductive layers and inadequate operational performance.
Innovation Solution
The implementation of an insulating structure extending in the same direction as the contact electrode, connected to the conductive layers, which forms through via holes with specific dimensions to prevent short-circuiting and ensure proper operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact holes are formed to connect conductive layers, then electrical connectivity is achieved, but short-circuiting between conductive layers may occur
Solution Approach 1:
An insulating structure is introduced as an intermediary element between the contact electrode and the conductive layers. This insulating structure includes an insulating layer that physically separates and electrically isolates the conductive layers, preventing short-circuiting while allowing the contact electrode to maintain electrical connectivity to the intended conductive layer through controlled via holes.
2Reliability
If contact electrodes extend in the first direction to connect conductive layers, then electrical connection is established, but manufacturing precision becomes difficult to control
Solution Approach 1:
The insulating structure serves as a manufacturing template and depth reference for forming via holes. By defining the insulating layer with specific thickness and positioning, the via hole depth is automatically controlled to stop at the appropriate location, eliminating the need for complex depth control processes and improving manufacturing precision.
Solution Approach 2:
The insulating structure is formed beforehand before the via holes are created. This preliminary formation of the insulating layer with predetermined dimensions provides a ready-made template that guides subsequent via hole formation, ensuring consistent depth and positioning without requiring complex real-time control during via fabrication.
3Reliability
If through via holes are formed to penetrate multiple layers, then connectivity is achieved, but the risk of short-circuiting increases
Solution Approach 1:
The insulating structure is strategically positioned within the via hole path to act as a barrier that prevents direct contact between opposing conductive layers. The via hole penetrates through the insulating layer, which remains as a residual barrier at the via bottom or sides, ensuring that even though the via connects different layers, no short-circuit occurs between conductive elements.
Data Source
AI summary
A semiconductor storage device includes: a substrate having a front surface; a plurality of conductive layers arranged in a first direction, the first direction intersecting the front surface of the substrate; a plurality of memory cells connected to the plurality of conductive layers; a contact electrode extending in the first direction and connected to one of the plurality of conductive layers; and an insulating structure extending in the first direction, the insulating structure connected to an end portion of the contact electrode on one side of the contact electrode in the first direction, and penetrating the plurality of conductive layers.