Storage Controller Empty Unit Identification via Multi-Voltage Bit Ratio Comparison

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Solution Overview

Problem

Conventional methods for determining empty storage units in rewritable non-volatile memory modules are prone to errors, leading to incorrect identification of storage space, which can result in data damage or management difficulties.

Innovation Solution

A memory management method that uses multiple read voltages to calculate bit value ratios for accurate identification of empty storage units, comparing these ratios to determine whether a storage unit is empty, thereby improving the accuracy of empty storage unit identification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a single read voltage is used to determine whether a storage unit is empty, then the operation is simple and fast, but the determination accuracy deteriorates leading to erroneous identification

Engineering Contradiction:
Improveempty storage unit determination accuracyVSAvoidread operation complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies parameter changes by using multiple read voltages (first read voltage and second read voltage) instead of a single read voltage to read the storage unit. Different read voltages produce different bit value ratios, and by comparing these ratios, the system achieves more accurate determination of whether the storage unit is empty, thereby resolving the contradiction between simplicity and accuracy.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent implements feedback by comparing the first bit value ratio with the second bit value ratio obtained from reading the same storage unit with different read voltages. This comparison mechanism provides feedback that enables more reliable determination of empty storage units, improving accuracy while maintaining operational feasibility.

Inventive Principle:
Principle #23Feedback

2Reliability

If conventional single voltage reading method is used, then the processing speed is fast, but the reliability of storage space management deteriorates due to erroneous determination

Engineering Contradiction:
Improvestorage space management reliabilityVSAvoidempty unit determination time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

By changing the read voltage parameter from a single value to multiple values (first read voltage and second read voltage), the system improves the reliability of storage space management. The comparison of bit value ratios obtained at different voltages provides more conclusive evidence for determining empty storage units, reducing erroneous determinations despite the additional time required.

Inventive Principle:
Principle #35Parameter changes

3Measurement precision

If multiple read voltages are used to improve determination accuracy, then the empty storage unit identification becomes more accurate, but the operation time increases

Engineering Contradiction:
Improveempty storage unit identification accuracyVSAvoidstorage management efficiency
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent uses parameter changes (multiple read voltages) to significantly improve empty storage unit identification accuracy. By reading the storage unit with both first and second read voltages and comparing the bit value ratios, the system achieves reliable determination even though it requires additional operation time compared to single-voltage methods.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10579518B2Memory management method and storage controller
Publication Date: 2020.03.03 SHENZHEN EPOSTAR ELECTRONICS LTD
  • US10579518B2 patent drawing
  • US10579518B2 patent drawing
  • US10579518B2 patent drawing

AI summary

A memory management method is provided. The method includes selecting a target physical programming unit; using a first read voltage corresponding to a first type physical page of the target physical programming unit to read a plurality of target memory cells of the target physical programming unit, so as to calculate a first bit value ratio; if the first bit value ratio is not smaller than a first preset threshold, using a second read voltage corresponding to the first type physical page of the target physical programming unit to read the plurality of target memory cells of the target physical programming unit, so as to calculate a second bit value ratio; and determining whether the first type physical page of the target physical programming unit is empty by comparing the first bit value ratio and the second bit value ratio.