Storage Controller Read Voltage Optimization via History Table
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Solution Overview
Problem
Existing memory systems face increased input/output (I/O) load and computational burden due to additional read operations required for obtaining threshold voltage distributions, which affects data retention and reliability in non-volatile memory devices.
Innovation Solution
A storage controller performs a direct memory access (DMA) read operation based on a history table to determine a second read voltage different from the initial read voltage, optimizing it without additional read operations, and updates the history table with this optimized voltage to improve data processing speed and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If additional read operations are performed to obtain threshold voltage distributions, then measurement precision is improved, but input/output load increases
Solution Approach 1:
The patent combines the threshold voltage distribution measurement function with the normal read operation by using the read disturb counter data already collected during regular reads. Instead of performing separate additional read operations, the system merges the measurement purpose with the existing read function, thereby obtaining threshold voltage information without increasing I/O load.
Solution Approach 2:
The read disturb counter automatically tracks threshold voltage distribution characteristics during normal read operations without requiring external intervention. The system uses its own operational data (read disturb counts) to self-determine when threshold voltage optimization is needed, eliminating the need for separate measurement operations.
2Measurement precision
If logical operations are performed to calculate threshold voltage distribution changes, then measurement precision is improved, but computational burden increases
Solution Approach 1:
The patent extracts the essential threshold voltage distribution information directly from the read disturb counter data without performing complex logical operations. By taking out only the necessary information (read disturb counts compared against reference values), the system avoids unnecessary computational steps while still achieving accurate threshold voltage optimization decisions.
Solution Approach 2:
The patent replaces complex logical operations with a simpler comparison mechanism. Instead of performing elaborate calculations to determine threshold voltage distribution changes, the system substitutes a direct comparison between current read disturb counts and reference values, significantly reducing computational burden while maintaining measurement precision.
3Productivity
If read voltage is optimized without additional read operations, then productivity is improved, but measurement precision may deteriorate
Solution Approach 1:
The patent performs preliminary action by continuously collecting read disturb counter data during normal operations and maintaining reference values for threshold voltage distributions. This preliminary data collection and reference establishment enables the system to make accurate threshold voltage optimization decisions without requiring additional read operations at the time of optimization, thus maintaining both productivity and measurement precision.
Data Source
AI summary
A storage controller communicates with a non-volatile memory device, and an operation method of the storage controller includes determining whether a first read voltage is registered at a history table, when it is determined that the first read voltage is registered at the history table, performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on the first read voltage, obtaining a page count value, based on the first DMA read operation, determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device, and updating the first read voltage of the history table based on the second read voltage.