Storage Controller Memory Pattern Identification via Read Voltage

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Solution Overview

Problem

Traditional methods for determining the storage pattern of rewritable non-volatile memory modules are inefficient and prone to errors, leading to misjudgment of blank storage units and difficulties in managing storage space, especially after long-term data storage.

Innovation Solution

A memory management method and storage controller that select a target physical programming unit, identify its storage status based on the memory type, calculate a bit value ratio using a specific read voltage, and determine the storage pattern accurately, thereby improving efficiency and accuracy in managing storage space.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the storage controller reads the storage unit to determine whether it is blank using traditional methods, then the storage unit can be identified, but misjudgment occurs after long-term data storage leading to data loss or management difficulties

Engineering Contradiction:
Improveaccuracy of blank storage unit identificationVSAvoidreliability of storage pattern determination
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent changes the parameter of read voltage from a single fixed voltage to multiple different read voltages. By applying multiple read voltages and comparing the read results, the system can more accurately determine the storage pattern of the storage unit, avoiding misjudgment that occurs with traditional single-voltage methods after long-term data storage.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If the storage controller performs many reading operations on physical pages to determine storage pattern for MLC memory, then the storage pattern can be identified, but the read count increases and error possibility increases

Engineering Contradiction:
Improveaccuracy of storage pattern identificationVSAvoidtime for reading operations
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent merges multiple read operations into a more efficient process by using multiple read voltages simultaneously or in sequence on the same physical pages. This approach consolidates the determination of multiple bit values (upper and lower physical pages) into a unified method that reduces the total number of separate read operations required while maintaining accurate storage pattern identification.

Inventive Principle:
Principle #5Merging (Combining)

3Device complexity

If the traditional approach is used to determine storage pattern, then the process is simple, but the management efficiency of storage space is reduced

Engineering Contradiction:
Improvesimplicity of determination processVSAvoidstorage space management efficiency
Core Design Contradiction:
Device complexityVSProductivity

Solution Approach 1:

The patent performs preliminary actions by determining the storage pattern of storage units in advance using multiple read voltages. This preliminary determination of storage patterns allows the storage controller to more efficiently manage storage space, allocate blank pages, and perform garbage collection operations without needing to perform additional verification reads, thereby improving overall management efficiency despite the increased complexity of the initial determination process.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS10474386B1Memory management method and storage controller
Publication Date: 2019.11.12 SHENZHEN EPOSTAR ELECTRONICS LTD
  • US10474386B1 patent drawing
  • US10474386B1 patent drawing
  • US10474386B1 patent drawing

AI summary

A memory management method is provided. The method includes selecting a target physical programming unit among a plurality of physical programming units of a rewritable non-volatile memory module; identifying a target storage status and a target read voltage according to a memory type of the rewritable non-volatile memory module; using the target read voltage to read the target physical programming unit to obtain a bit value ratio; and identifying a storage pattern of the target physical programming unit according to the bit value ratio.