Storage Device Open Memory Block Closure via Program Voltage
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Solution Overview
Problem
As semiconductor memory devices are scaled down due to high integration, they face issues that lead to data damage and decreased reliability, particularly related to open memory blocks that can result in memory cells being left in an erase state, causing deterioration.
Innovation Solution
The proposed solution involves an operating method for a storage device that includes entering a power-on mode, searching for open memory blocks with erase word lines, applying a program voltage to close them if the number of erase word lines is within a preset value, and transitioning to a normal operation mode, thereby preventing memory cells from being left in an erase state and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the storage device is scaled down due to high degree of integration, then manufacturing cost is reduced, but reliability decreases due to data damage in memory cells
Solution Approach 1:
The patent applies preliminary action by detecting open memory blocks during the power-on mode before normal operations begin, and proactively closing them by programming the erase word lines. This prevents potential data deterioration from occurring in the first place, rather than detecting and repairing it after damage occurs.
Solution Approach 2:
The patent implements preliminary anti-action by counteracting the harmful effect of open memory blocks before they can cause data damage. By detecting and closing open memory blocks during power-on mode, the system prevents the deterioration that would otherwise occur during normal operation.
2Reliability
If the storage device closes open memory blocks by programming erase word lines, then reliability is improved, but additional programming operations are required
Solution Approach 1:
The patent performs the programming operation to close open memory blocks during power-on mode, before the device enters normal operation. This preliminary action ensures reliability is established upfront, avoiding the need for continuous monitoring and intervention during normal operations.
Solution Approach 2:
The system performs self-service by automatically detecting open memory blocks and closing them without requiring external intervention or complex control mechanisms during normal operation. The power-on mode itself serves the dual purpose of initialization and reliability assurance.
3Reliability
If the storage device performs programming operations during power-on mode, then open memory blocks are closed and reliability is enhanced, but power-on time is extended
Solution Approach 1:
The patent applies partial action by selectively closing only those memory blocks that are detected as open during power-on mode, rather than programming all memory blocks uniformly. This targeted approach closes the necessary blocks to ensure reliability while minimizing the time extension during power-on.
4Reliability
If the storage device detects and closes open memory blocks, then data deterioration is prevented, but additional detection and control operations are required
Solution Approach 1:
The system implements self-service by having the power-on mode automatically perform detection and closing of open memory blocks without requiring separate control mechanisms or ongoing monitoring during normal operation. The initialization process itself ensures data integrity.
Solution Approach 2:
The patent performs the detection and closing operations preliminarily during power-on mode, before normal operations begin. This ensures data integrity is established upfront, avoiding the need for complex continuous monitoring and intervention systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively closes open memory blocks, preventing data deterioration and enhancing the reliability of the storage device by ensuring memory cells are quickly programmed out of an erase state, even during power interruptions.
Implementation Method 1
Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state
Data Source
AI summary
An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.