Storage Device Page Data Group Encoding for Single Read Voltage
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Solution Overview
Problem
Conventional storage devices require multiple read operations to retrieve data from multi-level cells, leading to reduced read performance and increased wear on memory cells due to frequent erase operations.
Innovation Solution
A storage device method that encodes and maps page data groups using different binary codes, allowing each page data group to be read using a single read voltage level, thereby reducing the number of read operations and delaying or eliminating the need for erase operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple read operations are used to retrieve data from multi-level cells, then data can be read from all page data groups, but read performance is reduced and the process becomes time-consuming
Solution Approach 1:
The patent segments data into multiple page data groups (first, second, third, etc.) that can be stored in different memory regions. Each page data group is independently readable with a single read operation, allowing selective retrieval without reading all data. This segmentation enables the system to read only the required page data group, significantly reducing read time and improving performance compared to conventional multi-level cell reading that requires multiple sequential operations.
2Adaptability or versatility
If frequent erase operations are performed on memory cells, then data can be rewritten, but memory cell deterioration increases
Solution Approach 1:
The patent divides memory space into multiple independent page data groups that can be independently managed. When data needs to be updated, only the specific page data group containing the updated data requires rewriting, rather than erasing and rewriting entire memory blocks. This selective rewriting approach minimizes the frequency of erase operations on individual memory cells, thereby extending their operational lifespan and improving overall reliability.
Solution Approach 2:
The patent performs preliminary encoding and mapping of data into multiple page data groups before storage. This preliminary organization allows the system to directly write updated data to the specific page data group without requiring preliminary erase operations on the entire memory block. By preparing the data structure in advance with distinct page groups, the system can perform incremental updates more efficiently, reducing wear on memory cells.
3Quantity of substance
If conventional multi-level cell reading is used, then all data can be stored in a single memory structure, but the reading process requires multiple operations
Solution Approach 1:
The patent segments stored data into multiple page data groups (first page data group, second page data group, etc.), each accessible through simplified read operations. While the overall storage structure maintains high capacity by utilizing multi-level cells, the segmentation allows the read operation to target specific page data groups independently. This reduces read operation complexity from multiple sequential operations to a single targeted operation, making the system easier to control and manage despite maintaining substantial storage capacity.
Data Source
AI summary
A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes dividing write data into a plurality of page data groups, each page data group including multiple bits of data; encoding the divided page data groups using different binary codes, respectively; mapping the encoded page data groups; programming, in first memory cells connected to one word line, programming states to which binary values of each of the mapped encoded page data groups are mapped, such that, the plurality of page data groups correspond respectively to a plurality of read voltage levels, and for each of the plurality of page data groups, the page data group can be read by performing a single read operation on the first memory cells using the read voltage level corresponding to the page data group.