Storage Device Program Pulse Tracking for Growing Defect Detection
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Solution Overview
Problem
Existing storage devices lack effective methods to detect and manage growing defects in memory cells, leading to reduced reliability and performance over time.
Innovation Solution
A storage device and method that include a memory cell array with a program pulse information generating unit to track the number of program pulses applied during operations, allowing the memory controller to determine if a growing defect is present by analyzing this information and adjusting operations accordingly, such as setting affected blocks as read-only to prevent further data corruption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the number of program pulses applied to memory cells is increased to ensure complete programming, then programming reliability is improved, but the probability of growing defects increases
Solution Approach 1:
The patent applies preliminary action by performing a read operation immediately after programming to detect growing defects before they manifest as actual failures. The memory controller executes a read command on the same memory block that was just programmed, allowing early detection of defects that occur during the programming process itself, rather than waiting for subsequent operations to reveal the problem.
Solution Approach 2:
The patent implements feedback by using the read operation results to determine whether to continue programming or switch to a different memory block. If the read operation detects a growing defect (through ECC failure or other error indicators), the system feedbacks this information to the controller, which then adjusts its behavior by stopping programming on the affected block and selecting an alternative block, thereby preventing further degradation.
2Productivity
If continuous programming operations are performed on memory blocks to maintain storage capacity, then productivity is improved, but the likelihood of encountering growing defects increases
Solution Approach 1:
The system performs a preliminary read operation on memory blocks before committing to extensive programming operations. This preliminary check allows the system to identify blocks with growing defects early in the process, preventing wasted programming cycles on defective blocks and maintaining overall system productivity by quickly redirecting operations to healthy blocks.
Solution Approach 2:
The patent applies dynamics by making the programming strategy adaptive based on real-time read operation results. The memory controller dynamically adjusts its behavior: if a block passes the post-programming read test, it continues to be used for storage; if it fails, the controller dynamically switches to an alternative block. This dynamic adaptation allows the system to maintain high productivity by continuously utilizing reliable memory blocks while isolating defective ones.
3Measurement precision
If read operations are performed frequently to detect growing defects, then detection capability is improved, but operation time increases
Solution Approach 1:
The patent applies partial action by performing read operations selectively rather than continuously on all memory blocks. The read operation is executed as a partial check immediately after programming a specific block, rather than performing exhaustive read tests on all blocks at all times. This selective approach provides sufficient defect detection capability while minimizing the time penalty, as read operations are only performed when necessary for quality control.
Data Source
AI summary
A memory device includes a memory cell array including a plurality of memory cells; a peripheral circuit configured to perform a program operation on selected memory cells among the plurality of memory cells; a program pulse information generator configured to generate program pulse information indicating whether a number of program pulses applied to the selected memory cells during the program operation has exceeded a reference value; and a status register configured to store status information and the program pulse information, wherein the memory device provides the status information and the program pulse information to an external controller in response to a command from the external controller.