Storage Device Program Operation Segmentation for Voltage Control
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Solution Overview
Problem
Current storage devices face challenges in achieving both high reliability and fast operation speeds, particularly in managing multiple program operations across memory cells with varying threshold voltages, which affects data storage and retrieval efficiency.
Innovation Solution
The proposed solution involves a storage device with a memory controller that performs a first program operation to set threshold voltages to an erase or intermediate state and a second program operation to set them to specific program states, using a 2-8 program scheme, allowing for efficient data storage and retrieval by controlling threshold voltages across multiple pages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a single program operation is performed to store all logical page data, then the operation process is simple, but the program time is long and reliability is reduced due to varying threshold voltages
Solution Approach 1:
The program operation is divided into a first program operation and a second program operation. The first program operation programs memory cells to have a threshold voltage of an intermediate state, while the second program operation programs memory cells to have threshold voltages corresponding to specific program states (P1-P7). This segmentation allows different voltage levels to be applied in different stages, improving reliability by addressing threshold voltage variations systematically.
Solution Approach 2:
The first program operation is performed as a preliminary step to set memory cells to an intermediate state before the second program operation programs them to final states. This preliminary action prepares the memory cells by applying a first program voltage, which facilitates the subsequent second program operation and reduces the impact of threshold voltage variations.
2Reliability
If multiple program operations are performed to improve reliability, then data storage reliability is enhanced, but the operation time increases
Solution Approach 1:
The program operation is divided into two distinct phases: a first program operation that sets memory cells to an intermediate state, and a second program operation that programs them to final states. This segmentation enables parallel processing potential and optimizes voltage application timing, reducing total program time while maintaining reliability.
Solution Approach 2:
The program operation uses periodic voltage application with distinct phases. The first program voltage is applied periodically to set intermediate states, followed by the second program voltage for final states. This periodic action structure allows for efficient time management and reduces overall program operation time.
3Manufacturing precision
If threshold voltages are programmed to specific states directly, then the number of operations is reduced, but precision in threshold voltage control is insufficient
Solution Approach 1:
The threshold voltage programming is segmented into two stages: first programming to an intermediate state, then programming to final states. This segmentation enables precise control of threshold voltages by applying different voltage levels in sequence, achieving better precision without significantly impacting overall operation efficiency.
Solution Approach 2:
The program voltage parameters are changed between the two operations. The first program operation uses a first program voltage to achieve intermediate states, while the second program operation uses a second program voltage for final states. This parameter change strategy enables precise threshold voltage control while maintaining operational efficiency.
Data Source
AI summary
An electronic device includes memory devices, and a memory controller configured to provide program commands instructing to store data in the memory devices, each of the memory devices including a memory block including a plurality of memory cells, a peripheral circuit configured to perform a first program operation and a second program operation of storing the data in select memory cells which are memory cells selected from among the plurality of memory cells, in response to the program command, and a program operation controller configured to control the first program operation and the second program operation, the first program operation performed using one logical page data among page data to be stored in the select memory cells, and the second program operation performed using remaining logical page data except for the one logical page data among the page data.