Storage Device Temperature-Compensated Read Voltage Control
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Solution Overview
Problem
Storage devices, particularly those used in automotive applications, face reliability issues due to temperature fluctuations, leading to shifting threshold voltage distributions in memory cells, which can result in data errors and increased latency during read operations.
Innovation Solution
A storage device with a temperature measurement circuit, temperature information storage, and voltage controller that determines and applies optimal read and pass voltages based on measured temperatures during program or erase operations to ensure accurate data retrieval.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If temperature compensation is not implemented, then device complexity is low, but data reliability deteriorates under temperature fluctuations
Solution Approach 1:
The system performs preliminary temperature measurement during program or erase operations and stores the temperature information in advance. When a read operation is needed, the pre-measured temperature data is retrieved and used to determine appropriate read voltages, eliminating the need for complex real-time temperature compensation while maintaining data reliability across temperature variations
Solution Approach 2:
The memory device autonomously measures its own temperature during programming or erasing operations and uses this self-obtained information to adjust read parameters. The device serves itself by internally storing temperature data and using it to determine read voltages without requiring external temperature sensors or complex compensation mechanisms
2Measurement precision
If fixed read voltages are used, then device complexity is low, but read accuracy deteriorates with temperature changes
Solution Approach 1:
The system transitions from using fixed read voltages to dynamic voltage adjustment based on measured temperature conditions. The voltage controller selects different read voltages corresponding to different temperature ranges, enabling the read operation to adapt to temperature changes and maintain accuracy without requiring complex real-time adjustment mechanisms
Solution Approach 2:
The system changes the read voltage parameter based on temperature information that was measured during program or erase operations. By storing temperature data and using it to determine appropriate read voltages, the system achieves temperature-compensated read accuracy while keeping the overall device complexity manageable through simple parameter lookup rather than complex calculation
3Reliability
If temperature measurement and voltage adjustment are performed, then data integrity is improved, but operation time increases
Solution Approach 1:
Temperature measurement is performed in advance during program or erase operations, and the measured temperature information is stored for later use. When read operations are needed, the pre-stored temperature data is immediately retrieved and used to determine read voltages, eliminating the need for time-consuming real-time temperature measurement and compensation during read operations
Solution Approach 2:
The memory device uses its own internally measured and stored temperature information to adjust read parameters autonomously. This self-service approach eliminates the need for external temperature sensing and complex real-time compensation algorithms, thereby maintaining data integrity while minimizing additional time overhead
Data Source
AI summary
A storage device performs a read operation, based on a temperature measured in a program operation or an erase operation. The storage device includes: a memory device including a plurality of memory blocks, the memory device measuring a temperature in a program operation or an erase operation; and a memory controller for setting an area in which the measured temperature is to be stored in the memory device, and controlling a read operation to be performed in the memory device. When a read command for a selected page among a plurality of pages included in each of the plurality of memory blocks is received from the memory controller, the memory device determines a read voltage and a pass voltage based on a temperature corresponding to the selected page and performs a read operation on the selected page by using the read voltage and the pass voltage.