Storage Drive Reaccess Module for NVSM Error Recovery
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Solution Overview
Problem
Non-volatile semiconductor memory (NVSM) systems face data transfer delays and errors due to speed differences between the ECC module and channels, and inaccurate voltage references can lead to data errors, increasing firmware overhead and processing time.
Innovation Solution
A storage drive with a reaccess module that generates descriptors independently of the NVSM control module to reaccess data blocks with errors, using a template-based system to update and trigger reaccess events, and set a maximum number of reaccess attempts to manage errors and optimize data transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the NVSM control module generates descriptors for reaccessing data blocks, then error management capability is improved, but firmware overhead and processing time increase
Solution Approach 1:
The system separates descriptor generation into two independent modules: the NVSM control module handles initial access descriptors, while the reaccess module handles error recovery descriptors. This segmentation allows parallel operation and eliminates the burden of error management from the main control firmware, reducing overhead while maintaining reliability.
Solution Approach 2:
The reaccess module operates autonomously to generate descriptors for reaccessing erroneous data blocks without requiring intervention from the NVSM control module. This self-service mechanism handles error recovery independently, freeing the main control system to focus on primary data access operations and reducing overall processing time.
2Device complexity
If the NVSM control module handles both initial access and reaccess operations, then system complexity is reduced, but processing speed decreases
Solution Approach 1:
The system divides the control functionality into distinct modules: the NVSM control module for initial access and the independent reaccess module for error recovery. This segmentation enables concurrent processing of normal and error recovery operations, improving data transfer efficiency without significantly increasing overall system complexity.
Solution Approach 2:
The reaccess module acts as an intermediary component that bridges the NVSM control module and the non-volatile semiconductor memory for error recovery operations. This intermediary handles reaccess operations independently, allowing the main control module to continue its primary functions without waiting for error recovery, thus improving processing speed.
3Reliability
If voltage reference accuracy is improved, then data transfer error rate decreases, but hardware complexity and cost increase
Solution Approach 1:
The system performs preliminary verification of data blocks during the initial access phase. When errors are detected, the reaccess module automatically triggers reaccess operations with adjusted parameters before finalizing the data transfer. This preliminary error detection and correction approach reduces the need for highly complex voltage reference systems while maintaining low error rates.
Solution Approach 2:
The reaccess module implements a feedback mechanism that monitors data transfer errors and dynamically adjusts reaccess operations. When errors are detected, the system automatically initiates reaccess with modified parameters, creating a closed-loop error correction system that maintains reliability without requiring overly complex hardware voltage reference systems.
Data Source
AI summary
A storage drive including a first module and a second module. The first module is configured to, based on an instruction signal of a first descriptor, transfer a block of data to or from a non-volatile semiconductor memory in the storage drive. The second module is configured to: monitor a status of the transfer of the block of data; determine whether an error exists with respect to the transfer of the block of data; and independent of communication with a host device, initiate generation of a second descriptor if the error exists. The second module is configured to, according to the second descriptor, perform a reaccess event including reaccessing the non-volatile semiconductor memory to again transfer the block of data to or from the non-volatile semiconductor memory.