Storage Node Contact Structure With Wider Overlay Margin
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Solution Overview
Problem
The integration of semiconductors poses a challenge in securing an overlay margin between storage nodes and storage node contact plugs, as existing connecting structures require high-cost EUV equipment and have a small processing margin, leading to potential overlay failures.
Innovation Solution
A semiconductor device and method that exclude the connecting structure between storage nodes and storage node contact plugs, featuring a storage node contact hole with a first plug filling the lower portion, a second plug protruding from the first plug, and an insulation layer spacer covering the side wall of the second plug, with a storage node positioned higher than the second plug and including an extension contacting its side wall and top surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a connecting structure (storage node contact plug 2) is formed between the storage node and the storage node contact plug to secure the overlay margin, then the overlay margin is improved, but the manufacturing cost increases due to requiring high-cost EUV equipment and the device complexity increases
Solution Approach 1:
The invention extracts and eliminates the separate connecting structure (storage node contact plug 2) by integrating its function directly into the storage node contact plug 1. The storage node directly contacts the storage node contact plug 1 without requiring an additional connecting structure, thereby removing the need for EUV equipment and reducing device complexity while maintaining overlay margin.
Solution Approach 2:
The invention merges the function of the connecting structure into the storage node contact plug 1 itself. The storage node contact plug 1 is designed to directly receive and connect to the storage node, combining what were previously separate components (connecting structure and contact plug) into a single integrated structure, eliminating the need for additional processing steps and equipment.
2Manufacturing precision
If a connecting structure is formed between the storage node and the storage node contact plug, then the overlay margin is secured, but the processing margin decreases and overlay failure is more likely to occur
Solution Approach 1:
By removing the separate connecting structure, the invention eliminates the additional interface between the storage node and the contact plug system. This reduction in the number of interfaces and processing steps increases the processing margin and reduces the cumulative probability of overlay failures that would occur at each additional alignment step.
3Manufacturing precision
If a connecting structure is formed between the storage node and the storage node contact plug, then the overlay margin is secured, but the manufacturing cost increases
Solution Approach 1:
The invention extracts and removes the need for the connecting structure and its associated EUV processing step. By having the storage node directly contact the storage node contact plug 1, the manufacturing process can use conventional lithography equipment instead of expensive EUV equipment, significantly reducing manufacturing costs while maintaining the necessary overlay margin.
Solution Approach 2:
The invention replaces the expensive EUV processing step with a conventional lithography process that uses cheaper, more widely available equipment. The simplified structure allows for manufacturing using standard, cost-effective processes rather than requiring advanced and expensive EUV technology.
Data Source
AI summary
A semiconductor device and method for fabricating the semiconductor device, which secure an overlay margin between the storage node and the storage node contact plug, as well as a processing margin, by excluding the connecting structure between the storage node and the storage node contact plug. A semiconductor device comprises a storage node contact hole provided between bit line structures, a first plug filling a lower portion of the storage node contact hole, a second plug protruding from the first plug, an insulation layer spacer covering a side wall of the second plug, and a storage node positioned at a higher level than the second plug and including an extension contacting another side wall of the second plug and a portion of a top surface of the first plug.