Strain-Controlled Superconductor Switching Without Thermal Latching

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Solution Overview

Problem

Conventional superconducting switch devices face limitations in speed and power consumption due to thermal transitions to non-superconducting conductive states, lacking efficient methods for switching between states.

Innovation Solution

The development of superconducting switch devices that utilize a non-thermal phase transition from a superconducting state to an insulating state, facilitated by a piezoelectric component applying strain to the superconductor layer, enabling faster operation and reduced power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If thermal transition to non-superconducting conductive state is used, then switching functionality is achieved, but speed and power consumption are limited

Engineering Contradiction:

Improveswitching speedVSAvoidpower consumption

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent utilizes a non-thermal phase transition from superconducting state to insulating state, rather than the conventional thermal transition to non-superconducting conductive state. This phase transition is induced by applying strain through a piezoelectric component, enabling faster switching speeds and reduced power consumption by avoiding thermal effects that limit performance.

Inventive Principle:

Principle #36Phase transitions

2Productivity

If conventional thermal transition method is used, then switching between states is achieved, but latching issues occur and speed is reduced

Engineering Contradiction:

Improveoperating speedVSAvoidlatching behavior

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The patent employs a non-thermal phase transition mechanism where the superconductor layer transitions directly from superconducting state to insulating state through strain-induced lattice deformation. This approach eliminates the thermal relaxation processes that cause latching behavior, enabling reliable high-speed switching operations.

Inventive Principle:

Principle #36Phase transitions

Solution Approach 2:

The patent replaces the thermal field mechanism with a mechanical field mechanism. Instead of using heat to induce the state transition, the invention uses mechanical strain applied through a piezoelectric component to deform the superconductor's crystal lattice, thereby controlling the phase transition without thermal effects that lead to latching.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

3Loss of energy

If thermal transition to non-superconducting state is used, then switching functionality is provided, but power consumption increases

Engineering Contradiction:

Improvepower consumptionVSAvoidswitching mechanism efficiency

Core Design Contradiction:

Loss of energyVSEase of operation

Solution Approach 1:

The patent substitutes the thermal field with a mechanical field for inducing state transitions. The piezoelectric component applies mechanical strain to the superconductor layer, causing a direct transition from superconducting to insulating state without requiring thermal energy input. This mechanical control mechanism significantly reduces power consumption compared to thermal methods.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for higher-speed operation and lower power consumption by reducing latching issues and optimizing the switching mechanism between superconducting and insulating states.

Implementation Method 1

a piezoelectric layer positioned adjacent to the superconductor layer, the piezoelectric layer configured to apply the first strain to the superconductor layer in response to the first voltage

Methodology Applied

Scientific EffectPiezoelectric effect: Piezoelectric Effect

Implementation Method 2

a superconductor layer adapted to transition from a superconducting state to an insulating state in response to a first strain

Methodology Applied

Scientific EffectSuperconductivity: Superconductivity

Data Source

PatentUS11832532B2Superconductor-to-insulator devices

Publication Date: 2023.11.28 PSIQUANTUM CORP

AI summary

A device includes a superconductor layer and a piezoelectric layer positioned adjacent to the superconductor layer. The piezoelectric layer is configured to apply a first strain to the superconductor layer in response to receiving a first voltage that is below a predefined voltage threshold and to apply a second strain to the superconductor layer in response to receiving a second voltage that is above the predefined voltage threshold. While the device is maintained below a superconducting threshold temperature for the superconductor layer and is supplied with current below a superconducting threshold current for the superconductor layer, the superconductor layer is configured to 1) operate in a superconducting state when the piezoelectric layer applies the first strain to the superconductor layer and 2) operate in an insulating state when the piezoelectric layer applies the second strain to the superconductor layer.