Strained Channel Growth Structure for Hetero-Epitaxy Integration
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Solution Overview
Problem
Current technologies face challenges in implementing a strained channel in devices, which is essential for improving electron and hole mobility and enhancing device performance.
Innovation Solution
A growth structure for a strained channel is developed, comprising a support substrate, a strain-relaxed buffer layer, a base growth layer, and a strained channel layer. This structure allows for the fabrication of a strained channel using a hetero-epitaxy method and subsequent monolithic integration with a base substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a strained channel is implemented to improve electron and hole mobility, then device operating performance is improved, but the complexity of manufacturing the strained channel increases
Solution Approach 1:
The manufacturing process is divided into distinct segments: growing the strained channel layer on a separate support substrate, releasing it, and then bonding it to the base substrate. This segmentation allows each step to be optimized independently, reducing overall manufacturing complexity while achieving the desired strained channel structure for improved device performance
Solution Approach 2:
A support substrate is introduced as an intermediary element during the growth and release processes. This intermediary enables the strained channel layer to be manufactured and handled separately before final integration, simplifying the overall process by avoiding direct manipulation of the fragile strained layer on the final substrate
2Ease of manufacture
If hetero-epitaxy method is used to grow strained channel layer on support substrate, then strained channel fabrication is enabled, but additional processing steps are required
Solution Approach 1:
The strained channel layer is grown and prepared on a support substrate in advance, before the actual device assembly. This preliminary action includes growing the layer with desired strain characteristics, releasing it from the support substrate, and storing it ready for bonding. By completing these steps beforehand, the main device fabrication process is simplified even though additional processing steps are introduced overall
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution enables the fabrication of devices with improved operating performance, including high-speed operation with low power consumption, by effectively utilizing the enhanced mobility of electrons and holes in strained material layers.
Implementation Method 1
a strain-relaxed buffer (SRB) layer disposed on a support substrate
Implementation Method 2
a strained channel layer is grown on a support substrate by using a hetero-epitaxy method
Data Source
AI summary
Disclosed are a growth structure for a strained channel, and a strained channel using the same and a method of manufacturing a device using the same. The growth structure for a strained channel includes a support substrate, a strain-relaxed buffer (SRB) layer disposed on a support substrate, a base growth layer grown to have one composition on the SRB layer, and a strained channel layer grown to have another composition on the base growth layer. The strained channel layer may include at least one of a tensile-strained channel layer or a compressively strained channel layer.