Strained Semiconductor Channel Structure for Mobility-Limited Scaling
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Solution Overview
Problem
As semiconductor devices miniaturize, transistors face challenges in reducing power consumption and improving speed due to physical limits on power consumption density and mobility, making it difficult to enhance their performance.
Innovation Solution
A semiconductor structure is developed with a channel comprising a first semiconductor layer and a second semiconductor layer around it, where the second layer introduces strain to improve carrier mobility, achieved through material selection and deposition process adjustments, such as mismatched lattice constants and deposition parameter tuning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If transistor size is reduced to achieve miniaturization and high integration, then device density increases, but power consumption density and mobility reach physical limits
Solution Approach 1:
The patent changes the physical state and structural parameters of the semiconductor channel by introducing strain through the second semiconductor layer. This strain modifies the band structure and carrier transport properties, enabling improved mobility without further miniaturization, thus resolving the contradiction between density and power consumption.
Solution Approach 2:
The patent uses a composite semiconductor structure with a first semiconductor layer (channel) and a second semiconductor layer (strain-introducing layer). This composite structure allows the channel to benefit from strain-induced mobility enhancement while maintaining the necessary dimensional scaling for high integration density.
2Quantity of substance
If transistor size is reduced to achieve miniaturization, then device density increases, but carrier mobility reaches physical limits
Solution Approach 1:
The patent changes the mechanical and electrical parameters of the channel by introducing strain through the second semiconductor layer. This strain modifies the crystal lattice spacing and carrier effective mass, thereby enhancing carrier mobility without requiring further reduction in device dimensions.
Solution Approach 2:
The patent employs a composite semiconductor structure where the second semiconductor layer serves as a strain-introducing material with different lattice constant than the first semiconductor layer. This composite approach enables controlled strain induction to boost carrier mobility while maintaining compatibility with scaled device dimensions for high integration.
3Quantity of substance
If transistor size is reduced to improve integration, then device density increases, but transistor speed deteriorates
Solution Approach 1:
The patent changes the electrical parameters of the transistor channel by introducing strain through the second semiconductor layer. This strain enhancement increases carrier velocity and transit time reduction, thereby improving transistor switching speed while maintaining the scaled dimensions necessary for high integration density.
Solution Approach 2:
The patent uses a composite semiconductor structure with strain-introducing second layer to enhance carrier transport properties. This allows scaled transistors to maintain or improve switching speed despite size reduction, resolving the contradiction between integration density and transistor speed.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach increases carrier mobility and current speed, reduces power consumption, and enhances transistor performance by elongating the distance between atoms in the semiconductor layer, allowing for better integration and higher performance while reducing transistor size.
Implementation Method 1
The second semiconductor layer introduces strain into the channel
Data Source
AI summary
Provided are a semiconductor structure and a method for manufacturing the same, a memory device and a method for manufacturing the same. The semiconductor structure includes at least one transistor. Each of the at least one transistor includes a channel including a first semiconductor layer and a second semiconductor layer disposed around the first semiconductor layer. The second semiconductor layer introduces strain into the channel.