Strained Semiconductor FinFET Channel Oxide Interface
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices, such as FinFET transistors, face limitations in enhancing electron mobility and performance due to inadequate control over stress or strain in the channel region, which affects their operational efficiency.
Innovation Solution
A method of fabricating semiconductor devices involves forming a multi-gate transistor with a fin structure, utilizing a first and second oxide region interface to introduce stress or strain, enhancing electron mobility by controlling the oxidation process parameters like time and temperature to optimize the strain level.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional FinFET transistor fabrication is used, then manufacturing simplicity is maintained, but electron mobility and device performance are insufficient
Solution Approach 1:
The patent applies local quality by forming oxide regions with different compositions and strain characteristics at specific locations within the channel. The first oxide region and second oxide region are selectively formed to create localized strain fields that enhance electron mobility in critical areas without requiring complete restructuring of the entire device, thus improving performance while controlling complexity
Solution Approach 2:
The patent utilizes parameter changes by varying oxidation conditions (time, temperature, atmosphere) to control the composition and strain properties of oxide regions. By adjusting oxidation parameters, the method creates controlled strain levels in the channel region, enabling performance enhancement through precise parameter control rather than fundamental process changes
2Reliability
If oxide regions are formed to introduce strain, then electron mobility is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The patent applies preliminary action by forming the first oxide region with controlled strain characteristics before forming the second oxide region. This sequential approach allows the first oxide region to establish a baseline strain field, and the second oxide region to be adjusted accordingly to achieve the desired total strain level, thereby reducing the overall precision burden on the oxidation process
Solution Approach 2:
The patent uses the oxide regions as intermediary structures that mediate between the fabrication process and the channel region. These oxide regions act as strain mediators, converting oxidation process parameters into controlled mechanical strain in the channel, which enhances electron mobility while providing a buffer that reduces the direct impact of manufacturing variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described method effectively increases electron mobility and improves the performance of semiconductor devices by strategically forming oxide regions to create a controlled strain environment within the device, thereby enhancing operational efficiency.
Implementation Method 1
The interface provides a stress or a strain on the channel region. The stress or the strain enhances electron mobility and alters the performance of the semiconductor device.
Data Source
AI summary
A semiconductor device with a strained region is provided. The semiconductor device includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer, the second dielectric layer having a first fin disposed therein and an interface disposed proximate the first fin. The interface includes a first oxide region disposed in the first dielectric layer and a second oxide region disposed in the second dielectric layer. The interface induces strain in a region of the semiconductor device. A method of making a semiconductor device with a strained region is also provided.