Strained GaInAsP LED for Plant Illumination
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Solution Overview
Problem
Traditional LED plant illumination technologies have low light-emitting output power and inefficiency, which limits their effectiveness in promoting plant growth and photosynthesis, especially in indoor cultivation systems where energy and cost savings are crucial.
Innovation Solution
The development of an LED for plant illumination using a strained light-emitting layer with a GaXIn(1-X)AsYP(1-Y) material composition, which improves light-emitting efficiency by 50%-100%, and a specific epitaxial structure that includes a barrier layer and window layer to optimize light output within the 650-750 nm wavelength range, enhancing photosynthesis and extending the LED's service life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional LED plant illumination is used, then the system structure is simple, but the light-emitting efficiency is low and output power is insufficient
Solution Approach 1:
The patent employs composite material structures including GaXIn(1-X)AsYP(1-Y) light-emitting layers combined with barrier layers and window layers to achieve high light-emitting efficiency. The multi-layer epitaxial structure integrates different materials with specific bandgap properties to optimize photon generation and extraction, resolving the contradiction between improved productivity and increased device complexity through material science advancement.
Solution Approach 2:
The patent implements local quality optimization by creating spatially varying compositional profiles within the light-emitting layers. The GaXIn(1-X)AsYP(1-Y) composition is specifically engineered with graded parameters to enhance light emission at critical interfaces, while barrier layers provide localized carrier confinement. This localized optimization achieves high overall efficiency without requiring complete structural redesign.
2Loss of energy
If traditional LED plant illumination is used, then the device is easy to manufacture, but the energy consumption is high and service life is limited
Solution Approach 1:
The patent achieves reduced energy consumption through parameter optimization in the GaXIn(1-X)AsYP(1-Y) light-emitting layers. By adjusting composition ratios (X and Y parameters), thicknesses, and doping concentrations, the LED converts electrical energy to optical energy with minimal losses. The barrier layers further optimize carrier injection efficiency, reducing non-radiative recombination and improving overall energy utilization while maintaining manufacturability through established epitaxial growth techniques.
3Productivity
If LED with GaXIn(1-X)AsYP(1-Y) light-emitting layer is used, then the light-emitting efficiency is improved by 50%-100%, but the manufacturing precision requirement increases
Solution Approach 1:
The patent manages manufacturing precision requirements through systematic parameter optimization. The GaXIn(1-X)AsYP(1-Y) composition parameters (X and Y values) are selected to provide optimal balance between light-emitting efficiency and manufacturability. The epitaxial growth process parameters are standardized to achieve consistent compositional control, and the multi-layer structure design provides tolerance buffering that maintains high efficiency even with minor variations in layer thickness or composition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The new LED technology achieves high output power and efficiency, improving photosynthesis and extending the service life of the LED, while reducing energy consumption and costs, making it suitable for multi-layer 3D combined cultivation systems with minimal heat and space requirements.
Implementation Method 1
the plant cultivation by the light-emitting diode (LED) attracts much attention due to excellent monochromaticity, energy saving, long service life and small size
Data Source
AI summary
A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaXIn(1-x)AsY1P(1-Y), 0<X<1 and 0<Y≤0.05, and the barrier layer has a component formula of (AlaGa1-A)bIn(1-b)P, 0.3≤a≤1 and 0<b<1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.