Strained InP Superlattice Structure for Faster Carrier Recombination
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Solution Overview
Problem
Current semiconductor light-emitting devices face challenges in optimizing carrier recombination speed and mobility due to limitations in the composition and strain of III-V compound semiconductor layers, which affect their efficiency and performance across various applications.
Innovation Solution
The semiconductor device incorporates a first and second semiconductor structure with alternating layers of different indium atomic percentages, introducing tensile or compressive strain to enhance electron and hole mobility, thereby increasing carrier recombination speed. The layers are designed to form superlattice structures with specific indium atomic ratios and lattice constants, optimizing the bandgap and lattice matching with the substrate to improve device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional III-V compound semiconductor layers are used with fixed composition, then manufacturing process is simple, but carrier recombination speed and mobility are limited
Solution Approach 1:
The semiconductor structure is divided into multiple alternating layers with different indium atomic percentages (e.g., 5-15% and 15-30%), creating a superlattice structure. This segmentation allows each layer to contribute differently to carrier transport and recombination, thereby enhancing overall carrier recombination speed while maintaining manufacturability through standardized growth processes.
Solution Approach 2:
Different regions of the semiconductor structure are assigned different indium compositions tailored to specific functional requirements. Layers with lower indium content (5-15%) provide lattice matching and structural stability, while layers with higher indium content (15-30%) enhance carrier mobility and recombination. This local optimization of composition resolves the contradiction between performance enhancement and manufacturing complexity.
2Productivity
If layers with different indium atomic percentages are introduced to enhance carrier mobility, then carrier recombination speed improves, but manufacturing precision requirements increase
Solution Approach 1:
The invention utilizes controlled variation of indium atomic percentage as a key parameter to optimize device performance. By establishing specific indium composition ranges (5-15% and 15-30%) and corresponding thickness ratios, the patent transforms the manufacturing challenge into a parameter optimization problem that can be addressed through standard molecular beam epitaxy or metal-organic chemical vapor deposition processes with conventional precision control.
Solution Approach 2:
The patent employs composite semiconductor structures combining different III-V compound materials with varying indium contents. These composite layers are grown alternately to form a superlattice that leverages the advantageous properties of each composition range, achieving high carrier recombination efficiency while using established composite material growth techniques that do not require extraordinary manufacturing precision.
3Reliability
If superlattice structures with alternating indium percentages are used, then optoelectronic characteristics improve, but device structure complexity increases
Solution Approach 1:
The superlattice structure segments the semiconductor device into repeating units of alternating indium composition layers. Each segment contributes to the overall optoelectronic function through its specific band structure and carrier properties. This modular segmentation achieves superior optoelectronic performance while maintaining structural regularity that simplifies device fabrication and characterization compared to entirely unique layer designs.
Solution Approach 2:
The patent merges multiple functional requirements into a single superlattice structure that simultaneously provides lattice matching, carrier confinement, and enhanced recombination. By combining layers with different indium percentages in a periodic arrangement, the structure achieves multiple optoelectronic functions that would otherwise require separate components, thereby improving performance without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances carrier recombination speed and mobility, leading to improved optoelectronic characteristics such as increased efficiency and reduced serial resistance, making the semiconductor device suitable for a wide range of applications including illumination and communication systems.
Implementation Method 1
introducing tensile or compressive strain to enhance electron and hole mobility
Implementation Method 2
optimizing the bandgap and lattice matching with the substrate to improve device performance
Data Source
AI summary
A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.