Strained Monocrystalline Semiconductor Region via Crystal Orientation
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Solution Overview
Problem
The production of semiconductor bodies with strained regions using different materials is costly and complex due to the need for multiple materials, adhesion layers, and metallization, which increases production complexity and expense.
Innovation Solution
A semiconductor body is produced using the same semiconductor material, such as silicon, with different lattice constants in distinct regions, creating a strained layer through varying crystal orientations, such as (100) and (111) or (311), which induces mechanical stress without the need for different materials, allowing for a less expensive and simpler production process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different materials are used to produce strained regions in semiconductor bodies, then charge carrier mobility is improved, but production cost and process complexity increase
Solution Approach 1:
The patent changes the crystal orientation parameter of the semiconductor material to induce strain. By growing epitaxial layers with different crystal orientations (e.g., <100> vs <111> or <311>), the lattice constant varies, creating strained regions that improve charge carrier mobility without requiring different materials. This parameter-based approach eliminates the need for additional adhesion layers and complex metallization processes.
Solution Approach 2:
The patent uses the same semiconductor material (silicon) throughout the entire structure, maintaining material homogeneity. The strain is induced solely through variations in crystal orientation rather than material composition, thereby eliminating the need for multiple materials, adhesion layers, and complex processing steps associated with heteromaterial structures.
2Reliability
If different materials are used to produce strained regions, then charge carrier mobility increases, but production cost increases
Solution Approach 1:
The patent achieves strain-induced mobility enhancement by changing the crystal orientation parameter during epitaxial growth. This approach uses standard silicon material with controlled orientation variations, avoiding the need for expensive silicon-germanium or other alloy materials, thereby reducing production costs while maintaining the mobility improvement benefit.
Solution Approach 2:
By maintaining material homogeneity (using only silicon), the patent eliminates costs associated with sourcing, processing, and integrating multiple materials. The strain is achieved through crystallographic orientation control during a single epitaxial growth process, simplifying manufacturing and reducing overall production expenses.
3Stress or pressure
If different materials are used for strained regions, then lattice constant differences produce strain, but additional adhesion layers and metallization are required
Solution Approach 1:
The patent induces mechanical strain by varying the crystal orientation parameter rather than material composition. Epitaxial layers grown with different orientations (e.g., <100> substrate with <111> or <311> upper layers) have different lattice constants, creating the necessary strain in the channel region without requiring additional adhesion layers or metallization structures.
Solution Approach 2:
The patent maintains material homogeneity throughout the structure, using only silicon. This eliminates the need for intermediate adhesion layers that would be required when joining dissimilar materials, and removes the need for additional metallization processes, thereby reducing the total number of layers and simplifying the overall device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of semiconductor bodies with strained regions that increase charge carrier mobility while reducing production costs and complexity, applicable in electronic components like MOSFETs, without compromising breakdown voltage.
Implementation Method 1
a second monocrystalline region of the semiconductor material adjoining the first semiconductor region and having a second lattice constant, which is different than the first, along the reference direction, wherein a third, strained semiconductor region arises between the first and second semiconductor regions
Implementation Method 2
Mechanical stresses thus arise in the crystal, which occur in a strained region between the first region and the second region
Implementation Method 3
This compressive stress leads to a reduction of the effective mass of the free holes and thus to an increase in the hole mobility
Implementation Method 4
By means of the strained region, it is possible to increase the charge carrier mobility in the third dopant region (channel region) or to reduce the channel resistance
Data Source
AI summary
A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.